Ordering number:5182
NPN Triple Diffused Planar Silicon Transistor
2SA1967
High-Voltage Amplifier,
High-Voltage Switching Applications
Features
· High breakdown voltage (V min=–900V). |
||
|
|
CEO |
· Small C (C |
ob |
typ=2.2pF). |
ob |
|
· High reliability (Adoption of HVP process).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SA1967]
JEDEC : TO-220AB |
1 : Base |
EIAJ : SC46 |
2 : Collector |
|
3 : Emitter |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
–900 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
–900 |
V |
Emitter-to-Base Voltage |
VEBO |
|
–7 |
V |
Collector Current |
IC |
|
–10 |
mA |
Collector Current (Pulse) |
ICP |
|
–30 |
mA |
Collector Dissipation |
PC |
|
1.75 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=–900V, IE=0 |
|
|
–1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=–5V, IC=0 |
|
|
–1 |
µA |
DC Current Gain |
hFE |
VCE=–5V, IC=–1mA |
20 |
|
50 |
|
Gain-Bandwidth Product |
fT |
VCE=–10V, IC=–1mA |
|
6 |
|
MHz |
Output Capacitance |
Cob |
VCB=–100V, f=1MHz |
|
2.2 |
|
pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=–500µA, IB=–100µA |
|
|
–1 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=–500µA, IB=–100µA |
|
|
–1.5 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=–100µA, IE=0 |
–900 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=–1mA, RBE=∞ |
–900 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=–100µA, IC=0 |
–7 |
|
|
V |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/92095YK (KOTO) TA-0444 No.5182–1/3
2SA1967
No.5182–2/3