Sanyo 2SA1965 Specifications

Ordering number:5031

PNP Epitaxial Planar Silicon Transistor

2SA1965

Muting Circuit Applications

Features

·Very small-sized package permitting 2SA1965applied sets to be made small and slim.

·Small output capacitance.

·Low collectot-to-emitter saturation voltage.

·Small ON resistance.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2106A

[2SA1965]

1 : Base

2 : Emitter

3 : Collector

SANYO : SMCP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–15	V
Collector-to-Emitter Voltage	VCEO		–10	V
Emitter-to-Base Voltage	VEBO		–5	V
Collector Current	IC		–100	mA
Collector Current (Pulse)	ICP		–200	mA
Base Current	IB		–20	mA
Collector Dissipation	PC		150	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=–12V, IE=0			–0.1	µA
Emitter Cutoff Current	IEBO	VEB=–4V, IC=0			–0.1	µA
DC Current Gain	hFE	VCE=–2V, IC=–5mA	200		600
Gain-Bandwidth Product	fT	VCE=–5V, IC=–10mA		600		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		5.0		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–10mA, IB=–1mA		–16	–35	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–10mA, IB=–1mA		–0.75	–1.1	V

Marking : KA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/32495YK (KOTO) TA-0114 No.5031–1/3

2SA1965

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0		–15			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞		–10			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0		–5			V
ON Resistance	Ron	IB=–3mA, f=1MHz			1.2		Ω

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