Sanyo 2SA1963 Specifications

Ordering number:5230

PNP Epitaxial Planar Silicon Transistor

2SA1963

High-Frequecy Low-Noise Amplifier,

Ultrahigh-Speed Switching Applications

Features

·Low noise : NF=1.5dB typ (f=1GHz).

·High gain : | S2le2=9dB| typ (f=1GHz).

·High cutoff frequency :Tf=5GHz typ.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2018B

[2SA1963]

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–12	V
Collector-to-Emitter Voltage	VCEO		–8	V
Emitter-to-Base Voltage	VEBO		–2	V
Collector Current	IC		–50	mA
Collector Dissipation	PC		200	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter			Symbol				Conditions		Ratings		Unit
								min	typ	max
Collector Cutoff Current				ICBO		VCB=–10V, IE=0				–1.0	µA
Emitter Cutoff Current				IEBO		VEB=–1V, IC=0				–1.0	µA
DC Current Gain				hFE		VCE=–5V, IC=–10mA		20*		120*
Gain-Bandwidth Product				fT		VCE=–5V, IC=–10mA		3	5		GHz
Output Capacitance				Cob		VCB=–10V, f=1MHz			0.8	1.3	pF
Reverse Transfer Capacitance				Cre		VCB=–10V, f=1MHz			0.55		pF
Forward Transfer Gain			| S2le |2(1)			VCE=–5V, IC=–10mA, f=1GHz		7	9		dB
			| S2le |2(2)			VCE=–2V, IC=–3mA, f=1GHz			6.5		dB
Noise Figure				NF		VCE=–5V, IC=–5mA, f=1GHz			1.5	3.0	dB
* : The 2SA1963 is classified by 10mA hFE as follows :							Marking : MS
	20 1 50	40 2 80			60	3 120	hFE ranks : 1, 2, 3

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/83095 (KOTO) TA-0541 No.5230–1/5

2SA1963

No.5230–2/5