Sanyo 2SA1896 Specifications

Ordering number:4718A

PNP Epitaxial Planar Silicon Transistor

2SA1896

DC/DC Converter, Motor Driver Applications

Features

·Adoption of FBET processes.

·Large current capacity.

·Low collector-to-emitter saturation voltage.

·Small size making it easy to provide high-density, small-sized hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038A

[2SA1896]

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–25	V
Collector-to-Emitter Voltage	VCEO		–20	V
Emitter-to-Base Voltage	VEBO		–7	V
Collector Current	IC		–2.5	A
Collector Current (Pulse)	ICP		–5	A
Collector Dissipation	PC	Mounted on ceramic board (250mm2×0.8mm)	1.3	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=–20V, IE=0			–100	nA
Emitter Cutoff Current	IEBO	VEB=–6V, IC=0			–100	nA
DC Current Gain	hFE1	VCE=–2V, IC=–0.5A	140*		400*
	hFE2	VCE=–2V, IC=–2.5A	70
Gain-Bandwidth Product	fT	VCE=–2V, IC=–0.3A		400		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		26		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–1.5A, IB=–30mA		–220	–400	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–1.5A, IB=–30mA		–0.9	–1.2	V

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/D2696TS/63095YK (KOTO) BX-0843 No.4718–1/3

2SA1896

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0		–25			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞		–20			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0		–7			V

* : The 2SA1896 is classified by 0.5A hFE as follows :

140 S 280 200 T 400

Marking : AM hFE rank : S, T

No.4718–2/3