Sanyo 2SA1866 Specifications
Ordering number:4721
PNP Epitaxial Planar Silicon Transistor
2SA1866
Muting Circuits, Driver Applications
Features
· On-chip bias resistors (R1=47kΩ, R2=47kΩ).
· Very small-sized package making 2SA1866-applied
sets small and slim.
· Small ON resistance.
· High gain-bandwidth product fT.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rettimEV
egatloVtupnIV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
NI
C
PC
B
C
Package Dimensions
unit:mm
2106A
[2SA1866]
1 : Base
2 : Emitter
3 : Collector
SANY O : SMCP
51–V
51–V
01–V
41–V
05–Am
001–Am
01–Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
V
OBC
V
OEC
V
OBE
V
EF
V
*T
V
*bo
I,V01–=
BC
EC
BE
EC
EC
BC
0=1.0–Aµ
E
I,V01–=
0=5.0–Aµ
E
I,V5–=
0=03–35–08–Aµ
C
I,V2–=
Am5–=001
C
I,V5–=
Am01–=
C
zHM1=f,V01–=9.0Fp
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* : Charactersistic of the constituent transistor.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/62094MT (KOTO) AX-9000 No.4721–1/3
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2SA1866
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Marking : CA
Electrical Connection
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I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
)ffo(NI
V
)no(NI
V
no
I,Am2–=
R,Am1–=
EC
EC
NI
Am2.0–=02–06–Vm
B
I,Aµ01–=
0=51–V
E
=∞ 51–V
EB
I,V2–=
Aµ001–=8.0–2.1–5.1–V
C
I,V3.0–=
Am5–=0.1–3.2–0.4–V
C
zHM1=f,V01–=0.01 Ω
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No.4721–2/3
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