Sanyo 2SA1864 Specifications
Ordering number:EN4719
PNP Epitaxial Planar Silicon Transistor
2SA1864
Muting Circuits, Driver Applications
Features
· On-chip bias resistors (R1=4.7kΩ, R2=4.7kΩ).
· Very small-sized package making 2SA1864-applied
sets small and slim.
· High gain-bandwidth product fT.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCrotcelloCI
)esluP(tnerruCrotelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
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* : Characteristic of tje constituent transistor.
Marking : AA
OBC
OEC
OBE
NI
C
PC
B
C
OBC
OEC
OBE
EF
*T
*bo
Package Dimensions
unit:mm
2106A
[2SA1864]
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
51–V
51–V
01–V
41-V
001–Am
002–Am
02–Am
051Wm
˚C
˚C
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V
V
V
V
V
V
I,V01–=
BC
BC
BE
EC
EC
BC
0=1.0–Aµ
E
I,V01–=
0=5.0–Aµ
E
I,V5–=
0=014–235–067–Aµ
C
I,V2–=
Am02–=05
C
I,V5–=
Am01–=006zHM
C
zHM1=f,V01–=9.0Fp
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/62094 MT (KOTO) AX-8999 No.4719–1/3
2SA1864
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ecantsiseRNOnoRV
Electrical Connection
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I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
)ffo(NI
V
)no(NI
I,Am5–=
Am5.0–=03–001–Vm
B
I,Aµ01–=
0=51–V
E
R,Am1–=
=∞ 51–V
EB
I,V2–=
EC
EC
NI
Aµ001–=8.0–2.1–5.1–V
C
I,V3.0–=
Am02–=0.1–1.2–0.4–V
C
zHM1=f,V5–=0.5 Ω
sgnitaR
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No.4719–2/3
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