Sanyo 2SA1864 Specifications

Ordering number:EN4719

PNP Epitaxial Planar Silicon Transistor

2SA1864

Muting Circuits, Driver Applications

Features

Package Dimensions

·On-chip bias resistors (R1=4.7kΩ, R2=4.7kΩ).

·Very small-sized package making 2SA1864-applied sets small and slim.

·High gain-bandwidth productTf.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

unit:mm

2106A

[2SA1864]

1 : Base

2 : Emitter

3 : Collector

SANYO : SMCP

Parameter	Symbol	Conditions			Ratings			Unit
Collector-to-Base Voltage	VCBO						–15	V
Collector-to-Emitter Voltage	VCEO						–15	V
Emitter-to-Base Voltage	VEBO						–10	V
Input Voltage	VIN						-14	V
Collector Current	IC						–100	mA
Colletor Current (Pulse)	ICP						–200	mA
Base Current	IB						–20	mA
Collector Dissipation	PC						150	mW
Junction Temperature	Tj						150	˚C
Storage Temperature	Tstg				–55 to +150			˚C
Electrical Characteristics at Ta = 25˚C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Collector Cutoff Current	ICBO	VCB=–10V, IE=0					–0.1	µA
Collector Cutoff Current	ICEO	VCB=–10V, IE=0					–0.5	µA
Emitter Cutoff Current	IEBO	VEB=–5V, IC=0	–410		–532		–760	µA
DC Current Gain	hFE	VCE=–2V, IC=–20mA	50
Gain-Bandwidth Product	fT*	VCE=–5V, IC=–10mA			600			MHz
Output Capacitance	Cob*	VCB=–10V, f=1MHz			0.9			pF

* : Characteristic of tje constituent transistor. Marking : AA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/62094 MT (KOTO) AX-8999 No.4719–1/3

			2SA1864
	Parameter	Symbol	Conditions		Ratings		Unit
				min	typ	max
	Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–5mA, IB=–0.5mA		–30	–100	mV
	Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–15			V
	Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞	–15			V
	Input OFF-State Voltage	VIN(off)	VCE=–2V, IC=–100µA	–0.8	–1.2	–1.5	V
	Input ON-State Voltage	VIN(on)	VCE=–0.3V, IC=–20mA	–1.0	–2.1	–4.0	V
	Input Resistance	R1		3.3	4.7	6.1	kΩ
	Resistance Ratio	R1/R2		0.9	1.0	1.1
	ON Resistnace	Ron	VIN=–5V, f=1MHz		5.0		Ω

Electrical Connection

No.4719–2/3