Ordering number:EN4133
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PNP Epitaxial Planar Silicon Transistor |
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2SA1854 |
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20V/5A Switching Applications |
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Applications |
Package Dimensions |
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· Strobes, power supplies, relay drivers, lamp drivers. |
unit:mm |
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Features |
2084B |
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[2SA1854] |
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·Adoption of FBET and MBIT processes.
·Large allowable collector dissipation.
·Low saturation voltage.
·Large current capacity.
·Fast switching speed.
·Usage of radial taping to meet automatic mounting.
1 |
: Emitter |
2 |
: Collector |
3 |
: Base |
Specifications |
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SANYO : FLP |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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–25 |
V |
Collector-to-Emitter Voltage |
VCEO |
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–20 |
V |
Emitter-to-Base Voltage |
VEBO |
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–5 |
V |
Collector Current |
IC |
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–5 |
A |
Colletor Current (Pulse) |
ICP |
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–8 |
A |
Base Current |
IB |
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–0.5 |
A |
Collector Dissipation |
PC |
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1.5 |
W |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=–20V, IE=0 |
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–500 |
nA |
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Emitter Cutoff Current |
IEBO |
VEB=–4V, IC=0 |
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–500 |
nA |
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DC Current Gain |
hFE1 |
VCE=–2V, IC=–500mA |
100* |
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400* |
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hFE2 |
VCE=–2V, IC=–4A |
60 |
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Gain-Bandwidth Product |
fT |
VCE=–5V, IC=–200mA |
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320 |
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MHz |
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Output Capacitance |
Cob |
VCB=–10V, f=1MHz |
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60 |
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pF |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=–3mA, IB=–60mA |
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–250 |
–500 |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=–3mA, IB=–60mA |
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–1.0 |
–1.3 |
V |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/5132MH (KOTO) No.4133–1/4
2SA1854
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=–10µA, IE=0 |
–25 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=–1mA, RBE=∞ |
–20 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=–10µA, IC=0 |
–5 |
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V |
Turn-ON Time |
ton |
See specified Test Circuit |
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40 |
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ns |
Storage Time |
tstg |
See specified Test Circuit |
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200 |
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ns |
Fall Time |
tf |
See specified Test Circuit |
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10 |
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ns |
* : The 2SA1854 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switchint Time Test Circuit
Unit (resistance : Ω, capacitance : F)
No.4133–2/4
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