Sanyo 2SA1815 Specifications

Ordering number:EN4625
PNP Epitaxial Planar Silicon Transistor
2SA1815
FM, RF, MIX, IF Amplifier, High-Frequency
General-Purpose Amplifier Applications
Features
· High power gain : PG=25dB (f=100MHz).
· High cutoff frequency ; fT=750MHz typ.
· Low collector-to-emitter saturation voltage.
· Complementary pair with the 2SC4432.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2018A
[2SA1815]
C : Collector B : Base E : Emitter
SANYO : CP
OBC OEC OBE
51–V 21–V 3–V 05–Am 052Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
niaGrewoPGPVECI,V01–=
* : The 2SA1815 is calssified by 5mA hFE as follows :
0213060814090725531
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
V
OBC
V
OBE
V
EF
V
T
V
bo
V
er
I
)tas(EC
C
I,V21–=
BC BE EC EC BC BC
0=1.0–Aµ
E
I,V2–=
0=1.0–Aµ
C
I,V01–=
Am5–=*06*072
C
I,V01–=
Am5–=057zHM
C
zHM1=f,V01–=2.16.1Fp zHM1=f,V01–=9.0Fp
I,Am01–=
Am1–=1.0–3.0–V
B
C
zHM001=f,Am01–=52Bd
Marking : JS hFE rank : 3, 4, 5
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/12894HO (KOTO) AX-8848 No.4625–1/3
sgnitaR
tinU
PG Test Circuit
Unit (capacitance : F) L1 : 1mmø plated wire 10mmø 5T, pitch 15mm, tap : 2T from base side
L2 : 1mmø plated wire 10mmø 7T, pitch 10mm, tap : 2T from VC side. L3 : 1mmø plated wire 10mmø 3T, pitch 10mm
2SA1815
No.4625–2/3
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