Sanyo 2SA1814 Specifications
Ordering number:EN3973
PNP Epitaxial Planar Silicon Transistor
2SA1814
Low-Frequency General-Purpose Amplifier
Driver, Muting Circuit Applications
Features
· Very small-sized package permitting 2SA1814applied sets to be made smaller and slimmer.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· Low collector-to-emitter saturation voltage
(V
CEO(sat)
· High V
EBO
≤0.3V).
(V
EBO
≥15V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
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Marking : KS
OBC
OEC
OBE
C
PC
B
C
OBC
OBE
EF
T
bo
Package Dimensions
unit:mm
2018B
[2SA1814]
1 : Base
2 : Emitter
3 : Collector
SANY O : CP
03–V
52–V
51–V
051–Am
003–Am
03–Am
draobnodetnuoM 052Wm
˚C
˚C
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nimpytxam
V
V
V
V
V
I
)tas(EC
C
I
)tas(EB
C
I,V02–=
BC
BE
EC
EC
BC
0=1.0–Aµ
E
I,V01–=
0=1.0–Aµ
C
I,V5–=
Am1–=0050080021
C
I,V01–=
Am01–=012zHM
C
zHM1=f,V01–=6.2Fp
I,Am05–=
Am1–=51.0–3.0–V
B
I,Am05–=
Am1–=87.0–1.1–V
B
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/53094TH (KOTO) 8-7539, 8460 No.3973–1/3
2SA1814
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I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Aµ01)–(=
0=03–V
E
R,Am1)–(=
=∞ 52–V
EB
I,Aµ01)–(=
0=51–V
C
sgnitaR
nimpytxam
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No.3973–2/3
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