Sanyo 2SA1732 Specifications

Ordering number:EN3136

PNP Epitaxial Planar Silicon Transistor

2SA1732

High-Speed Switching Applications

Features

· Adoption of FBET processes.

· Large current capacity.

· Low collector-to-emitter saturation voltage.

· Fast switching speed.

Package Dimensions

unit:mm

2045B

[2SA1732]

1 : Base
2 : Collector
3 : Emitter
4 : Collector

SANYO : TP

unit:mm

2044B

[2SA1732]

1 : Base
2 : Collector
3 : Emitter
4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83098HA (KT)/6299MO, TS No.3136–1/4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

egatloVnitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloC(V

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTFFO-nruTt

* : The 2SA1732 is classified by 500mA hFE as follows :

041Q07002R001082S041

C

PC

C

EF

hEF2VECI,V2–=

T

no
gts

OBC
OEC
OBE

Tc=25˚C

V

OBC

V

OBE

1VECI,V2–=

V
V

bo

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB

C

I

OEC)RB(

C

I

OBE)RB(

E

ffo

2SA1732

I,V04–=

BC
BE

EC
BC

0=1–Aµ

E

I,V3–=

0=1–Aµ

C
C

A8–=

C

I,V2–=

C

I,A4–=

B

I,A4–=

B

I,Aµ001–=

0=05–V

E

R,Am1–=

=∞ 04–V

EB

I,Aµ001–=

0=5–V

C

05–V
04–V
5–V
8–A
21–A
1W
51W

˚C
˚C

sgnitaR

nimpytxam

Am005–=

Am005–=052zHM
zHM1=f,V01–=001Fp
Am002–=3.0–8.0–V
Am002–=59.0–3.1–V

tiucriCtseTdeificepseeS05001sn
tiucriCtseTdeificepseeS021022sn
tiucriCtseTdeificepseeS051003sn

*07*082

52

tinU

Switching Time T est Circuit

Unit (capacitance : F)

No.3136–2/4