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Ordering number:EN3135A
PNP Epitaxial Planar Silicon Transistor
2SA1731
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm
2045B
[2SA1731]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1731]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/8219MO/6139MO, TS No.3135–1/4
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Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloC(V
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
* : The 2SA1731 is classified by 500mA hFE as follows :
041Q07002R001082S041
C
PC
C
EF
hEF2VECI,V2–=
T
no
gts
OBC
OEC
OBE
Tc=25˚C
V
OBC
V
OBE
1VECI,V2–=
V
V
bo
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB
C
I
OEC)RB(
C
I
OBE)RB(
E
ffo
2SA1731
I,V04–=
BC
BE
EC
BC
0=1–Aµ
E
I,V3–=
0=1–Aµ
C
C
A5–=
C
I,V2–=
C
I,A5.2–=
B
I,A5.2–=
B
I,Aµ001–=
0=05–V
E
R,Am1–=
=∞ 04–V
EB
I,Aµ001–=
0=5–V
C
05–V
04–V
5–V
5–A
8–A
1W
51W
˚C
˚C
sgnitaR
nimpytxam
Am005–=
Am005–=003zHM
zHM1=f,V01–=06Fp
Am521–=3.0–8.0–V
Am521–=59.0–3.1–V
tiucriCtseTdeificepseeS05001sn
tiucriCtseTdeificepseeS021022sn
tiucriCtseTdeificepseeS051003sn
*07*082
52
tinU
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
No.3135–2/4