Sanyo 2SA1730 Specifications

Ordering number:EN3134

PNP Epitaxial Planar Silicon Transistor

2SA1730

High-Speed Switching Applications

Features

·Adoption of FBET , MBIT processes.

·Large current capacity.

·Low collector-to-emitter saturation voltage.

·Fast switching speed.

·Small-sized package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038

[2SA1730]

E : Emitter

C : Collector

B : Base

SANYO : PCP (Bottom view)

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–50	V
Collector-to-Emitter Voltage	VCEO		–40	V
Emitter-to-Base Voltage	VEBO		–5	V
Collector Current	IC		–3	A
Collector Current (Pulse)	ICP		–6	A
Collector Dissipation	PC	Mounted on ceramic board (250mm2×0.8mm)	1.5	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=–40V, IE=0			–1	µA
Emitter Cutoff Current	IEBO	VEB=–3V, IC=0			–1	µA
DC Current Gain	hFE1	VCE=–2V, IC=–500mA	70*		280*
	hFE2	VCE=–2V, IC=–3A	25
Gain-Bandwidth Product	fT	VCE=–2V, IC=–500mA		300		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		35		pF
Collector-to-Emitter Saturatin Voltage	VCE(sat)	IC=–1.5A, IB=–75mA		–0.3	–0.8	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–1.5A, IB=–75mA		–0.95	–1.3	V

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83098HA (KT)/6139MO, TS No.3134–1/4

2SA1730

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–50			V
Collector-to-Emitter Saturation Voltage	V(BR)CEO	IC=–1mA, RBE=∞	–40			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0	–5			V
Turn-ON Time	ton	See specified Test Circuit		50	100	ns
Storage Time	tstg	See specified Test Circuit		120	220	ns
Turn-OFF Time	toff	See specified Test Circuit		150	300	ns

* : The 2SA1730 is classified by 500mA hFE as follows :

70 Q 140 100 R 200 140 S 280

Marking : AH hFE rank : Q, R, S

Swicthing Time Test Circuit

Unit (resistance : Ω, capacitance : F)

No.3134–2/4