Ordering number:EN3133
PNP Epitaxial Planar Silicon Transistor
2SA1729
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2038
OBC
OEC
OBE
Mounted on ceramic board (250mm2×0.8mm)
[2SA1729]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
05–V
04–V
5–V
5.1–A
3–A
3.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V2–=
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
OBC
OBE
1VECI,V2–=
EF
T
bo
)tas(EC
)tas(EB
V
V
V
V
I
C
I
C
I,V04–=
BC
BE
EC
BC
0=1–Aµ
E
I,V3–=
0=1–Aµ
C
C
C
I,V2–=
C
Am001–=
A5.1–=
Am001–=003zHM
zHM1=f,V01–=81Fp
I,Am008–=
Am04–=3.0–8.0–V
B
I,Am008–=
Am04–=9.0–3.1–V
B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/6089MO, TS No.3133–1/4
sgnitaR
*07*082
52
tinU
2SA1729
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egatloVnwodkaerBesaB-ot-rotcelloC(V
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
* : The 2SA1729 is classified by 100mA hFE as follows :
041Q07002R001082S041
Marking : AG
hFE rank : Q, R, S
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
sgnitaR
nimpytxam
I
OBC)RB
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
ffo
I,Aµ01–=
0=05–V
E
R,Am1–=
=∞ 04–V
EB
I,Aµ01–=
0=5–V
C
tiucriCtseTdeificepseeS05001sn
tiucriCtseTdeificepseeS021022sn
tiucriCtseTdeificepseeS051003sn
tinU
No.3133–2/4