Sanyo 2SA1700 Specifications

Ordering number:EN2974A
PNP Epitaxial Planar Silicon Transistor
2SA1700
High-Voltage Driver Applications
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
Package Dimensions
unit:mm
2045B
[2SA1700]
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1700]
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/8219MO/6139MO, TS No.2974-1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOrotcelloCC
ecnaticapaCrefsnarTesreveRC
emiTNO-nruTt
emiTFFO-nruTt
* : The 2SA1700 is classified by 50mA hFE as follows :
021D06002E001
C
PC
C
EF
T
er
no
2SA1700
sgnitaR
004–V 004–V 5–V 002–Am 004–Am 1W 01W
˚C
˚C
tinU
OBC OEC OBE
Tc=25˚C
nimpytxam
V
OBC OBE
bo
ffo
BC
V
BE
V
EC
V
EC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
BC
V
BC
I,V003–=
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
I,V01–=
Am05–=*06*002
C
I,V03–=
Am01–=07zHM
C
I,Am05–=
Am5–=8.0–V
B
I,Am05–=
Am5–=0.1–V
B
I,Aµ01–=
0=004–V
E
R,Am1–=
= 004–V
EB
I,Aµ01–=
0=5–V
C
zHM1=f,V03–=5Fp zHM1=f,V03–=4Fp
tiucriCtseTdeificepseeS52.0sµ tiucriCtseTdeificepseeS5sµ
Switching Time T est Circuit
Unit (resistance : , capacitance : F)
No.2974-2/4
Loading...
+ 2 hidden pages