Sanyo 2SA1699 Specifications

Ordering number:EN2973

PNP Epitaxial Planar Silicon Transistors

2SA1699

High-Voltage Driver Applications

Features

· High breakdown voltage.

· Adoption of MBIT process.

· Excellent hFE linearity.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

PC

C

Package Dimensions

unit:mm

2003A

[2SA1699]

JEDEC : TO-92 B : Base
EIAJ : SC-43 C : Collector
SANYO : NP E : Emitter

OBC
OEC
OBE

004–V
004–V
5–V
002–Am
004–Am
006Wm

˚C

˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

h

V

OBC
OBE

EF

T

BC

V

BE

V

EC

V

EC

I

)tas(EC

C

I

)tas(EB

C

I,V003–=

0=1.0–Aµ

E

I,V4–=

0=1.0–Aµ

C

I,V01–=

Am05–=*06*002

C

I,V03–=

Am01–=07zHM

C

I,Am05–=

Am5–=8.0–V

B

I,Am05–=

Am5–=0.1–V

B

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

nimpytxam

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82098HA (KT)/9149MO, TS No.2973-1/3

sgnitaR

tinU

Continued on next page.

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

ecnaticapaCtuptuOrotcelloCC

ecnaticapaCrefsnrarTesreveRC

emiTNO-nruTt

emiTFFO-nruTt

* : The 2SA1699 is classified by 50mA hFE as follows :

021D06002E001

Switching Time T est Circuit

2SA1699

sgnitaR

nimpytxam

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

V

bo

V

er
no

ffo

I,Aµ01–=

0=004–V

E

R,Am1–=

=∞ 004–V

EB

I,Aµ01–=

0=5–V

C
BC
BC

zHM1=f,V03–=5Fp
zHM1=f,V03–=4Fp

tiucriCtseTdeificepseeS52.0sµ
tiucriCtseTdeificepseeS5sµ

tinU

Unit (resistance : Ω, capacitance : F)

No.2973-2/3