Sanyo 2SA1689 Specifications

Ordering number:EN3233

PNP Epitaxial Planar Silicon Transistor

2SA1689

TV Camera Deflection

High-Voltage Driver Applications

Features

· High breakdown voltage.

· Small reverse transfer capacitance and excellent high
frequency chacacteristic.

· Excellent DC current gain.

· Adoption of FBET process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

Package Dimensions

unit:mm

2003A

[2SA1689]

JEDEC : TO-92 B : Base
EIAJ : SC-43 C : Collector
SANYO : NP E : Emitter

003–V
003–V
5–V
05–Am
001–Am
006Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

hEF1VECI,V6–=
hEF2VECI,V6–=

V

OBC
OBE

T

BC

V

BE

V

EC

I

)tas(EC

C

I

)tas(EB

C

I,V002–=

0=1.0–Aµ

E

I,V4–=

0=1.0–Aµ

C

Am1.0–=001023

C

Am1–=001

C

I,V03–=

Am01–=07zHM

C

I,Am01–=

Am1–=0.1–V

B

I,Am01–=

Am1–=0.1–V

B

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

nimpytxam

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82098HA (KT)/O269MO, TS No.3233-1/3

sgnitaR

tinU

2SA1689

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

ecnaticapaCtuptuOrotcelloCC

ecnaticapaCrefsnarTesreveRC

oitaRniaGtnerruCCDh

EF

* : The 2SA1689 is classified by 0.1mA hFE as follows :

002E001023F061

nimpytxam

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

V

bo

V

er

oitarhEFh/1EF20.1

I,Aµ01–=

0=003–V

E

R,Am1–=

=∞ 003–V

EB

I,Aµ01–=

0=5–V

C
BC
BC

zHM1=f,V03–=4.2Fp
zHM1=f,V03–=5.1Fp

sgnitaR

tinU

No.3233-2/3