Ordering number:EN3011
PNP Epitaxial Planar Silicon Transistor
2SA1682
TV Camera Deflection,
High-Voltage Driver Applications
Features
· High breakdown voltage (V ≥300V).
CEO
· Small reverse transfer capacitance and excellent high frequency chacateristic (Cre : 1.5pF typ).
· Excellent DC current gain ratio (h ratio : 1.0 typ).
FE
· Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2018A
[2SA1682]
C : Collector
B : Base
E : Emitter
SANYO : CP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
–300 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
–300 |
V |
Emitter-to-Base Voltage |
VEBO |
|
–5 |
V |
Collector Current |
IC |
|
–50 |
mA |
Collector Current (Pulse) |
ICP |
|
–100 |
mA |
Collector Dissipation |
PC |
|
250 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
|
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
||
|
|
|
|
||||||
|
|
|
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=–200V, IE=0 |
|
|
–0.1 |
µA |
|||
Emitter Cutoff Current |
IEBO |
VEB=–4V, IC=0 |
|
|
–0.1 |
µA |
|||
DC Current Gain |
hFE1 |
VCE=–6V, IC=–0.1mA |
100* |
|
320* |
|
|||
|
|
|
|
hFE2 |
VCE=–6V, IC=–1mA |
100 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=–30V, IC=–10mA |
|
70 |
|
MHz |
|||
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=–10mA, IB=–1mA |
|
|
–1.0 |
V |
|||
Base-to-Emitter Saturation Votlage |
VBE(sat) |
IC=–10mA, IB=–1mA |
|
|
–1.0 |
V |
|||
* : The 2SA1682 is classified by 0.1mA hFE as follows : |
Note : Marking : CS |
|
|
|
|
||||
|
100 4 200 |
160 5 320 |
|
|
hFE rank : 4, 5 |
|
|
|
|
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5189MO, TS No.3011-1/3
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