Sanyo 2SA1669 Specifications

Ordering number:EN2972
PNP Epitaxial Planar Silicon Transistor
2SA1669
High-Frequency Amplifier Applications
Features
· High cutoff frequnecy : fT=3.0GHz typ.
· High power gain : MAG=11dB typ (f=0.9GHz)
· Small noise figure : NF=2.0dB typ (f=0.9GHz)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOrotcelloCC
ecnaticapaCrefsnarTesreveRC
niaGrefsnarTdrawroFV
niaGrewoPelbaliavAmumixaMGAMVECI,V01–=
erugiFesioNFNVECI,V01–=
Note) Marking : DB
C
T
|S21e|
OBC OEC OBE
C
V
OBC
V
OBE
V
EF
V V
bo
V
er
2
Package Dimensions
unit:mm
2018A
[2SA1669]
C : Collector B : Base E : Emitter
SANY O : CP
02–V 51–V 3–V 05–Am 052Wm
˚C ˚C
sgnitaR
nimpytxam
I,V51–=
BC BE EC EC BC BC EC
0=1.0–Aµ
E
I,V2–=
0=1.0–Aµ
C
I,V01–=
Am5–=51
C
I,V01–=
Am5–=5.10.3zHG
C
zHM1=f,V01–=0.15.1Fp zHM1=f,V01–=7.0Fp
I,V01–=
C C C
zHG9.0=f,Am5–=0.5Bd zHG9.0=f,Am5–=11Bd zHG9.0=f,Am3–=0.2Bd
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/6069MO, TS No.2972-1/5
NF Test Circuit
2SA1669
Unit (resisiance : Ω)
No.2972-2/5
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