Sanyo 2SA1562 Specifications
Ordering number:EN2261A
· AF amplifier, various drivers.
Features
· Adoption of MBIT process.
· High DC current gain.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· High V
EBO
.
PNP Epitaxial Planar Silicon Transistors
2SA1562
High-hFE AF Amplifier Applications
Package DimensionsApplications
unit:mm
2045B
[2SA1562]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
SANYO : TP
unit:mm
2044B
[2SA1562]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
OBC
OEC
OBE
Tc=25˚C
03–V
52–V
51–V
2.1–A
2–A
1W
51W
˚C
˚C
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/8219MO/5197TA, TS No.2261-1/3
2SA1562
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatatloVnoitarutaSrettimE-ot-esaBV
egaloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
hEF1VECI,V5–=
hEF2VECI,V5–=
Switching Time T est Circuit
V
OBC
V
OBE
V
T
V
bo
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,V02–=
BC
BE
EC
BC
0=1–Aµ
E
I,V01–=
0=1–Aµ
C
C
C
I,V01=
C
I,A01)–(=
R,Am1=
I,Aµ01=
C
Am001–=0050080021
Am01–=053
Am05–=031zHM
zHM1=f,V01–=04Fp
I,Am005–=
Am01–=1.0–5.0–V
B
I,Am005–=
Am01–=87.0–1.1–V
B
0=03–V
E
=∞ 52–V
EB
0=51–V
sgnitaR
nimpytxam
.tiucriCtseTdeificepseeS13.0sµ
.tiucriCtseTdeificepseeS88.0sµ
.tiucriCtseTdeificepseeS32.0sµ
tinU
No.2261-2/3
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