Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2437B
2SA1538/2SC3953
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=400MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent HF
response : Cre=1.7pF/NPN, 2.2pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type : TO-126 plastic package.
( ) : 2SA1538
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2042B
[2SA1538/2SC3953]
8.0
4.0
1.0
1.0
=120Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
23
4.8
1.4
3.0
7.5
1.5
3.0
1.7
3.3
11.0
15.5
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
021)–(V
021)–(V
3)–(V
002)–(Am
004)–(Am
3.1W
8W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
hEF1V
hEF2V
V
OBC
OBE
T
BC
V
BE
EC
EC
V
EC
I,V08)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V01)–(=
C
Am01)–(=*04*023
Am001)–(=02
Am05)–(=004zHM
nimpytxam
* hFE1 : The 2SA1538/2SC3953 are classified by 50mA hFE as follows : Continued on next page.
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
53002RM (KT)/72098HA (KT)/N168MO/2037KI, TS No.2437-1/4
sgnitaR
tinU
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
--100
2SA1538
--80
–mA
C
--60
--40
Collector Current, I
--20
0
0 --4 --8 --16--12 --20
Collector-to-Emitter Voltage, VCE–V
--250
--200
2SA1538/2SC3953
V
bo
er
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
C
CE
--1.0mA
--0.9mA
BC
V
BC
I
)tas(EC
C
I
)tas(EB
C
--0.8mA
--0.7mA
--0.6mA
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--0.1mA
IB=0
ITR03907
I
-- V
C
BE
2SA1538
VCE=--10V
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am03)–(=
Am3)–(=0.1)–(V
B
I,Am03)–(=
Am3)–(=0.1)–(V
B
100
2SC3953
80
–mA
C
60
40
Collector Current, I
20
0
0
250
200
sgnitaR
nimpytxam
1.2Fp
)8.2(Fp
7.1Fp
)2.2(Fp
I
-- V
C
CE
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB=0
48 1612 20
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
ITR03908
2SC3953
VCE=10V
tinU
–mA
C
Collector Current, I
--150
--100
FE
DC Current Gain, h
--50
100
10
0
0 --1.2--1.0--0.8--0.6--0.4--0.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
C
2SA1538
VCE=--10V
23 5357
--10
Collector Current, IC–mA
7235
--100
ITR03909
ITR03911
–mA
C
Collector Current, I
DC Current Gain, h
FE
150
100
50
100
10
0
0 1.21.00.80.60.40.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 5357
10
Collector Current, IC–mA
C
7235
100
ITR03910
2SC3953
VCE=10V
ITR03912
No.2437-2/4
Page 3
1000
– MHz
T
2SA1538/2SC3953
f
-- I
T
C
7
5
3
2SA1538
VCE=--10V
1000
– MHz
T
7
5
3
f
-- I
T
C
2SC3953
VCE=10V
2
100
7
5
Gain-Bandwidth Product, f
3
--1.0
2
3257
--10
Collector Current, IC–mA
Cob -- V
32257
CB
--100
ITR03913
2SA1538
f=1MHz
10
7
5
3
2
1.0
Output Capacitance, Cob – pF
7
5
2
23 5757 2 3
--1.0 --10
Collector-to-Base Voltage, VCB-- V
Cre -- V
CB
57
ITR03915
2SA1538
--100
f=1MHz
10
7
5
2
100
7
5
Gain-Bandwidth Product, f
3
357
2
10
7
5
3
2
1.0
Output Capacitance, Cob – pF
7
5
2
10
7
5
10
Collector Current, IC–mA
Cob -- V
23 5757 2 3
1.0 10
Collector-to-Base Voltage, VCB-- V
Cre -- V
32257
CB
CB
100
ITR03914
2SC3953
f=1MHz
57
ITR03916
2SC3953
f=1MHz
100
3
2
1.0
7
Reverse Transfer Capacitance, Cre – pF
5
--1.0 --10
--10
7
5
3
2
(sat) – V
--1.0
CE
7
5
3
2
--0.1
7
Collector-to-Emitter
Saturation Voltage, V
5
3
23 5 7 23
--1.0
235757 2 3
Collector-to-Base Voltage, VCB-- V
VCE(sat) -- I
--10
Collector Current, IC–mA
C
23 5 7
57
ITR03917
2SA1538
IC / IB=10
--100
ITR03919
--100
3
2
1.0
7
Reverse Transfer Capacitance, Cre – pF
5
10
7
5
3
2
(sat) – V
1.0
CE
7
5
3
2
0.1
7
Collector-to-Emitter
Saturation Voltage, V
5
3
357 2357
235757 2 3
1.0 10
Collector-to-Base Voltage, VCB-- V
VCE(sat) -- I
10
Collector Current, IC–mA
57
100
ITR03918
C
2SC3953
IC / IB=10
100
23
ITR03920
No.2437-3/4
Page 4
2SA1538/2SC3953
1000
7
5
ICP=400mA
3
IC=200mA
–mA
2
C
100
7
5
3
Collector Current, I
2
For PNP, minus sign is omitted.
10
537 2 2537
10 100
Collector-to-Emitter Voltage, VCE–V
A S O
2SA1538 / 2SC3953
10ms
1ms
DC operation
Tc=25
°C
ITR03921
10
8
–W
C
6
4
2
Collector Dissipation, P
1.3
0
PC -- Ta
2SA1538 / 2SC3953
No heat sink
Ambient Temperature, Ta – ˚C
100 140120 1602006040 80
ITR03922
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2002. Specifications and information herein are subject to
change without notice.
PS No.2437-4/4
Page 5
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
Loading...