
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2437B
2SA1538/2SC3953
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=400MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent HF
response : Cre=1.7pF/NPN, 2.2pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type : TO-126 plastic package.
( ) : 2SA1538
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2042B
[2SA1538/2SC3953]
8.0
4.0
1.0
1.0
=120Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
23
4.8
1.4
3.0
7.5
1.5
3.0
1.7
3.3
11.0
15.5
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
021)–(V
021)–(V
3)–(V
002)–(Am
004)–(Am
3.1W
8W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
hEF1V
hEF2V
V
OBC
OBE
T
BC
V
BE
EC
EC
V
EC
I,V08)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V01)–(=
C
Am01)–(=*04*023
Am001)–(=02
Am05)–(=004zHM
nimpytxam
* hFE1 : The 2SA1538/2SC3953 are classified by 50mA hFE as follows : Continued on next page.
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
53002RM (KT)/72098HA (KT)/N168MO/2037KI, TS No.2437-1/4
sgnitaR
tinU

Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
--100
2SA1538
--80
–mA
C
--60
--40
Collector Current, I
--20
0
0 --4 --8 --16--12 --20
Collector-to-Emitter Voltage, VCE–V
--250
--200
2SA1538/2SC3953
V
bo
er
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
C
CE
--1.0mA
--0.9mA
BC
V
BC
I
)tas(EC
C
I
)tas(EB
C
--0.8mA
--0.7mA
--0.6mA
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--0.1mA
IB=0
ITR03907
I
-- V
C
BE
2SA1538
VCE=--10V
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am03)–(=
Am3)–(=0.1)–(V
B
I,Am03)–(=
Am3)–(=0.1)–(V
B
100
2SC3953
80
–mA
C
60
40
Collector Current, I
20
0
0
250
200
sgnitaR
nimpytxam
1.2Fp
)8.2(Fp
7.1Fp
)2.2(Fp
I
-- V
C
CE
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB=0
48 1612 20
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
ITR03908
2SC3953
VCE=10V
tinU
–mA
C
Collector Current, I
--150
--100
FE
DC Current Gain, h
--50
100
10
0
0 --1.2--1.0--0.8--0.6--0.4--0.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
C
2SA1538
VCE=--10V
23 5357
--10
Collector Current, IC–mA
7235
--100
ITR03909
ITR03911
–mA
C
Collector Current, I
DC Current Gain, h
FE
150
100
50
100
10
0
0 1.21.00.80.60.40.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 5357
10
Collector Current, IC–mA
C
7235
100
ITR03910
2SC3953
VCE=10V
ITR03912
No.2437-2/4