Ordering number:EN2253A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1478/2SC3788
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent high
frequency cahaceteristic
: Cre=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET process.
( ) : 2SA1478
CEO
≥200V.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2042A
[2SA1478/2SC3788]
B : Base
C : Collector
E : Emitter
SANYO : TO-126ML
002)–(V
002)–(V
5)–(V
001)–(Am
002)–(Am
3.1W
5W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
V
OBC
V
OBE
V
EF
V
T
V
bo
er
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
* : The 2SA1478/2SC3788 are classified by 10mA hFE as follows:
08C04021D06002E001023F061
I,V051)–(=
BC
BE
EC
EC
BC
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V01)–(=
C
I,V03)–(=
C
I,Am02)–(=
B
I,Am02)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am01)–(=*04*023
Am01)–(=051zHM
zHM1=f,V03)–(=
zHM1=f,V03)–(=BCV
Am2)–(=6.0)–(V
Am2)–(=0.1)–(V
0=002)–(V
∞
=
EB
0=5)–(V
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3247TA, TS No.2253-1/4
sgnitaR
7.1Fp
)6.2(Fp
2.1Fp
)7.1(Fp
002)–(V
tinU