Sanyo 2SA1437 Specifications

Ordering number:EN2524A

PNP Epitaxial Planar Silicon Transistor

2SA1437

High-hFE, AF Amplifier Applications

Applications

· AF amplifier, various drivers, muting circuit.

Features

· Very small-sized package permitting sets to be made smaller and slimer.

· Adoption of FBET process.

· High DC current gain : (h =400 to 1000).
					FE	≥100V).
· High breakdown voltage : (V
					CEO
· Low collector-to-emitter saturation voltage
: (VCE(sat)≤0.5V).					≥15V).
· High V	: (V		EBO
EBO
· Small C : (C		ob		=4.0pF typ).
ob

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2003A

[2SA1437]

JEDEC : TO-92 1 : Emitter

EIAJ : SC-43 2 : Collector

SANYO : NP 3 : Base

Parameter	Symbol	Conditions			Ratings			Unit
Collector-to-Base Voltage	VCBO						–120	V
Collector-to-Emitter Voltage	VCEO						–100	V
Emitter-to-Base Voltage	VEBO						–15	V
Collector Current	IC						–50	mA
Collector Current (Pulse)	ICP						–100	mA
Collector Dissipation	PC						500	mW
Junction Temperature	Tj						150	˚C
Storage Temperature	Tstg				–55 to +150			˚C
Electrical Characteristics at Ta = 25˚C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Collector Cutoff Current	ICBO	VCB=–80V, IE=0					–0.1	µA
Emitter Cutoff Current	IEBO	VEB=–10V, IC=0					–0.1	µA
DC Current Gain	hFE	VCE=–5V, IC=–10mA	400		700		1000
Gain-Bandwidth Product	fT	VCE=–10V, IC=–10mA			85			MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz			4.0			pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–10mA, IB=–0.2mA			–0.18		–0.5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–10mA, IB=–0.2mA			–0.7		–1.0	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–120					V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞	–100					V
Emitter-to-Base Breakdown Votage	V(BR)EBO	IE=–10µA, IC=0		–15				V

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73098HA (KT)/4231MH, 4077TA, TS No.2524-1/3

2SA1437

No.2524-2/3