Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High h
FE,
AF Amplifier Applications
Ordering number:ENN2456
2SA1436
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Applications
· AF amplifier, various drivers, muting circuit.
Features
· Adoption of MBIT process.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low collector-to-emitter saturation voltage
(V
· High V
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
=0.5V max).
CE(sat)
(V
EBO
tnerruCrotcelloCI
niaGtnerruCCD
≥15V).
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
C
C
hEF1VECI,V5–=
hEF2VECI,V5–=
T
PC
OBC
OEC
OBE
OBC
OBE
bo
Package Dimensions
unit:mm
2003B
[2SA1436]
V
V
V
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V04–=
BC
BE
EC
BC
0=1.0–Aµ
E
I,V01–=
0=1.0–Aµ
C
Am01–=0050080021
C
C
I,Aµ01–=
E
R,Am1–=
I,Aµ01–=
C
Am001–=002
I,V01–=
Am01–=001zHM
C
zHM1=f,V01–=5.7Fp
I,Am001–=
Am2–=2.0–5.0–V
B
I,Am001–=
Am2–=57.0–1.1–V
B
0=06–V
=∞ 05–V
EB
0=51–V
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
sgnitaR
nimpytxam
06–V
05–V
51–V
002–Am
003–Am
006Wm
˚C
˚C
tinU
22802TN (KT)/71598HA (KT)/4077TA, TS No.2456-1/3
Page 2
--
–mA
C
Collector Current, I
--
--
--
--
–mA
C
--
--
Collector Current, I
1000
–MHz
T
--
--
--
--
--
--
--
--
--
--
--
--
--
100
90
80
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
7
5
3
IC -- V
--140µA
--120µA
--100µA
--80µA
--60µA
--40µA
--20µA
0
--
10
--
5
Collector-to-Emitter Voltage, VCE–V
--20--
--
15
25
IC -- V
VCE=--5V
0
--
0.2
Base-to-Emitter Voltage, VBE–V
--
0.4
fT -- I
CE
=0
I
B
--30--35--40--45--
ITR03612
BE
°C
Ta=120
--
0.6
°C
°C
25
--40
--
0.8
ITR03614
C
VCE=--10V
2SA1436
50
--
1.0
--
200
--
180
--
160
--
140
–mA
C
--
120
--
100
--
--
Collector Current, I
--
--
10000
FE
1000
DC Current Gain, h
100
IC -- V
--4.5mA
--4.0mA
--3.5mA
CE
--3.0mA
--2.5mA
--2.0mA
--1.5mA
--1.0mA
--0.5mA
80
60
40
20
0
--
0.20
--
0.4
--
0.6
Collector-to-Emitter Voltage, VCE–V
hFE -- I
7
5
3
2
7
5
3
2
3
5
72
--
10
2
10
7
3
Collector Current, IC–mA
Cob -- V
C
5
72
--
100
CB
=0
I
B
--
0.8
3
ITR03613
VCE=--5V
5
7
--
ITR03615
f=1MHz
--
1000
1.0
2
100
7
5
Gain-Bandwidth Product, f
3
35 7
3
2
--
1.0
7
5
(sat) – V
3
CE
2
--
0.1
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
--
0.01
7
--
10
Collector Current, IC–mA
VCE(sat) -- I
5
7
2332
--
10
Collector Current, IC–mA
535322
--
100
ITR03616
C
IC / IB=50
5
7
--
100
3
5
7
ITR03618
--
1000
5
3
2
Output Capacitance, Cob – pF
1.0
--
1.0
10
7
5
3
2
(sat) – V
BE
1.0
7
5
3
2
Base-to-Emitter
Saturation Voltage, V
0.1
32 23
23 55
Collector-to-Base Voltage, VCB-- V
7
--
23
10
VBE(sat) -- I
5
7
--
10
Collector Current, IC–mA
5
7
--
100
7
--
100
ITR03617
C
IC / IB=50
5
3
7
--
1000
ITR03619
No.2456-2/3
Page 3
--
C
–mA
Collector Current, I
1000
--
C
--
--
100
10
1.0
5
ICP=–300mA
3
2
IC=–200mA
5
3
2
5
3
2
57
A S O
10m
s
2
100ms
3
DC operation
2
3355
--
1.0
Collector-to-Emitter Voltage, VCE–V
7
--
10
1ms
7
ITR03620
2SA1436
--
100
P
-- Ta
700
600
500
–mW
C
400
300
200
Collector Dissipation, P
100
0
0 20 40 60 80 100 120 140 150160
C
Ambient Temperature, Ta – ˚C
ITR03621
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
PS No.2456-3/3
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