Sanyo 2SA1435 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP Epitaxial Planar Silicon Transistor

High h

FE,

AF Amplifier Applications

Ordering number:ENN1856A

2SA1435

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

5.0

4.0

0.5

0.6

2.0

14.0

5.0

0.45

0.45

4.0

0.44

1.3

1.3

123

Applications

· Low frequency general-purpose amplifiers, drivers,
muting circuits.

Features

· Adoption of MBIT process.

· High DC current gain (hFE=500 to 1200).

· Large current capacity.

· Low colletor-to-emitter saturation voltage
(V

· High V

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Electrical Characteristics at Ta = 25˚C

≤0.5V max).

CE(sat)

(V

EBO

tnerruCrotcelloCI

niaGtnerruCCD

ecnaticapaCtuptuOC

≥15V).

EBO

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatoVnwodkaerBesaB-ot-rettimEV

OBC
OEC
OBE

C

PC

C

OBC
OBE

hEF1VECI,V5–=
hEF2VECI,V5–=

T

bo

)tas(EC
)tas(EB
OBC)RB(
OEC)RB(
OBE)RB(

Package Dimensions

unit:mm

2003B

[2SA1435]

V
V

V
V
I

C

I

C

I

C

I

C

I

E

I,V04–=

BC
BE

EC
BC

0=1.0–Aµ

E

I,V01–=

0=1.0–Aµ

C

Am01–=0050080021

C
C

I,Aµ01–=

E

R,Am1–=

I,Aµ01–=

C

Am002–=002

I,V01–=

Am01–=001zHM

C

zHM1=f,V01–=5.7Fp

I,Am001–=

Am4–=2.0–5.0–V

B

I,Am001–=

Am4–=57.0–1.1–V

B

0=06–V

=∞ 05–V

EB

0=51–V

1 : Emitter
2 : Collector
3 : Base
SANYO : NP

sgnitaR

nimpytxam

03–V
52–V
51–V
003–Am
005–Am
006Wm

˚C
˚C

tinU

22802TN (KT)/71598HA (KT)/3277KI/N135KI, TS No.1856-1/3

--200

--180

--160

--140

–mA

C

--120

--100

Collector Current, I

--80

--60

--40

--350

--300µA

--250

µA

µA

--200µA

--150

IC -- V

µA

--100µA

CE

--50µA

--20

=0

I

0

0 --4--2 --8 --10--6 --12 --14 --16 --18 --20

Collector-to-Emitter Voltage, VCE–V

--400

IC -- V

B

BE

ITR03602

VCE= --5V

2SA1435

--500

--400

–mA

C

--300

--200

Collector Current, I

--100

IC -- V

--5.0mA

--4.5mA

--4.0mA

--3.5mA

0

Collector-to-Emitter Voltage, VCE–V

3

2

--3.0mA

hFE -- I

CE

--2.5mA

--0.6 --0.8 --1.0--0.4--0.20

C

--2.0mA

--1.5mA

--1.0mA

=0

I

B

--0.5mA

ITR03603

VCE= --5V

--300

°C

C

Ta=120

°C

25

VCE= --5V

–mA

C

--200

--100

Collector Current, I

0

0 --0.2 --0.4 --0.6 --0.8 --1.0

3

2

Base-to-Emitter Voltage, VBE–V

fT -- I

– MHz

T

100

7

5

3

2

Gain-Bandwidth Product, f

°C

--40

ITR03604

FE

1000

DC Current Gain, h

100

10

Output Capacitance, Cob – pF

Ta=120

7

5

3

2

--3

--2 --5

5

3

2

7

5

°C

25

°C

°C

--40

--5

--7 --2

--10

Collector Current, IC–mA

--3

Cob -- V

CB

--7 --2

--100

--3

ITR03605

f=1MHz

--5

10

--3 --5 --7

--

10

--

7

--

5

--

3

--

2

(sat) – V

--

1.0

--

7

CE

--

5

--

3

--

2

--

0.1

--

7

Collector-to-Emitter

Saturation Voltage, V

--

5

--

3

--

5

--

3

--

7

7

--

--10

Collector Current, IC–mA

--5--2 --3 --5--3--2 --2

VCE(sat) -- I

--

--

--

2

10

Collector Current, IC–mA

5

--

3

--

7

--100

C

--

100

ITR03606

IC / IB=5

--

2

--

3

ITR03608

3

--1.0

--

0

10

--

7

--

5

--

3

--

2

(sat) – V

--2 --3 --5--5--7

Collector-to-Base Voltage, VCB-- V

VBE(sat) -- I

7

--

--10

--2 --3

ITR03607

C

IC / IB=5

0

BE

--

1.0

--

7

--

5

--

3

--

2

Base-to-Emitter

Saturation Voltage, V

--

--

5

0.1

--2--

--

5

3

--

7

--

10

Collector Current, IC–mA

--

--

5

2

--

3

--

7

--

--

100

2

--

ITR03609

--

5

3

No.1856-2/3

--1000

–mA

--100

C

--7

--5

--3

--2

--7

--5

ICP=–500mA

IC=–300mA

A S O

10ms

100ms

DC operation

--3

--2

--10

--7

--5

Collector Current, I

--3

--2

--1.0

--3 --5 --5

--5 --7

Collector-to-Emitter Voltage, VCE–V

--1.0

--2

--3

--7

--10

--2

1ms

--3

ITR03610

2SA1435

P

-- Ta

700

600

500

–mW

C

400

300

200

Collector Dissipation, P

100

0

0 20 40 60 80 100 120 140 160

C

Ambient Temperature, Ta – ˚C

ITR03611

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.

PS No.1856-3/3