Ordering number:ENN1856A
PNP Epitaxial Planar Silicon Transistor
2SA1435
High hFE, AF Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers, muting circuits.
Package Dimensions
unit:mm
2003B
Features |
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[2SA1435] |
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5.0 |
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4.0 |
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· Adoption of MBIT process. |
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4.0 |
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· High DC current gain (h =500 to 1200). |
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FE |
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5.0 |
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· Large current capacity. |
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· Low colletor-to-emitter saturation voltage |
0.45 |
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(VCE(sat)≤0.5V max). |
0.5 |
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0.45 |
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0.6 |
2.0 |
0.44 |
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· High V |
(V |
EBO |
≥15V). |
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14.0 |
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EBO |
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1 |
2 |
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Specifications |
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1.3 |
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1.3 |
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Absolute Maximum Ratings at Ta = 25˚C |
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1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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–30 |
V |
Collector-to-Emitter Voltage |
VCEO |
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–25 |
V |
Emitter-to-Base Voltage |
VEBO |
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–15 |
V |
Collector Current |
IC |
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–300 |
mA |
Collector Current (Pulse) |
ICP |
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–500 |
mA |
Collector Dissipation |
PC |
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600 |
mW |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=–40V, IE=0 |
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–0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=–10V, IC=0 |
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–0.1 |
µA |
DC Current Gain |
hFE1 |
VCE=–5V, IC=–10mA |
500 |
800 |
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1200 |
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hFE2 |
VCE=–5V, IC=–200mA |
200 |
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Gain-Bandwidth Product |
fT |
VCE=–10V, IC=–10mA |
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100 |
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MHz |
Output Capacitance |
Cob |
VCB=–10V, f=1MHz |
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7.5 |
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pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=–100mA, IB=–4mA |
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–0.2 |
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–0.5 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=–100mA, IB=–4mA |
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–0.75 |
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–1.1 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=–10µA, IE=0 |
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–60 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=–1mA, RBE=∞ |
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–50 |
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V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=–10µA, IC=0 |
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–15 |
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V |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22802TN (KT)/71598HA (KT)/3277KI/N135KI, TS No.1856-1/3
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