Sanyo 2SA1435 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP Epitaxial Planar Silicon Transistor

High h

FE,

AF Amplifier Applications

Ordering number:ENN1856A

2SA1435

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

5.0

4.0

0.5

0.6

2.0

14.0

5.0

0.45

0.45

4.0

0.44

1.3

1.3

123

Applications

· Low frequency general-purpose amplifiers, drivers,
muting circuits.

Features

· Adoption of MBIT process.

· High DC current gain (hFE=500 to 1200).

· Large current capacity.

· Low colletor-to-emitter saturation voltage
(V

· High V

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Electrical Characteristics at Ta = 25˚C

≤0.5V max).

CE(sat)

(V

EBO

tnerruCrotcelloCI

niaGtnerruCCD

ecnaticapaCtuptuOC

≥15V).

EBO

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatoVnwodkaerBesaB-ot-rettimEV

OBC
OEC
OBE

C

PC

C

OBC
OBE

hEF1VECI,V5–=
hEF2VECI,V5–=

T

bo

)tas(EC
)tas(EB
OBC)RB(
OEC)RB(
OBE)RB(

Package Dimensions

unit:mm

2003B

[2SA1435]

V
V

V
V
I

C

I

C

I

C

I

C

I

E

I,V04–=

BC
BE

EC
BC

0=1.0–Aµ

E

I,V01–=

0=1.0–Aµ

C

Am01–=0050080021

C
C

I,Aµ01–=

E

R,Am1–=

I,Aµ01–=

C

Am002–=002

I,V01–=

Am01–=001zHM

C

zHM1=f,V01–=5.7Fp

I,Am001–=

Am4–=2.0–5.0–V

B

I,Am001–=

Am4–=57.0–1.1–V

B

0=06–V

=∞ 05–V

EB

0=51–V

1 : Emitter
2 : Collector
3 : Base
SANYO : NP

sgnitaR

nimpytxam

03–V
52–V
51–V
003–Am
005–Am
006Wm

˚C
˚C

tinU

22802TN (KT)/71598HA (KT)/3277KI/N135KI, TS No.1856-1/3

--200

--180

--160

--140

–mA

C

--120

--100

Collector Current, I

--80

--60

--40

--350

--300µA

--250

µA

µA

--200µA

--150

IC -- V

µA

--100µA

CE

--50µA

--20

=0

I

0

0 --4--2 --8 --10--6 --12 --14 --16 --18 --20

Collector-to-Emitter Voltage, VCE–V

--400

IC -- V

B

BE

ITR03602

VCE= --5V

2SA1435

--500

--400

–mA

C

--300

--200

Collector Current, I

--100

IC -- V

--5.0mA

--4.5mA

--4.0mA

--3.5mA

0

Collector-to-Emitter Voltage, VCE–V

3

2

--3.0mA

hFE -- I

CE

--2.5mA

--0.6 --0.8 --1.0--0.4--0.20

C

--2.0mA

--1.5mA

--1.0mA

=0

I

B

--0.5mA

ITR03603

VCE= --5V

--300

°C

C

Ta=120

°C

25

VCE= --5V

–mA

C

--200

--100

Collector Current, I

0

0 --0.2 --0.4 --0.6 --0.8 --1.0

3

2

Base-to-Emitter Voltage, VBE–V

fT -- I

– MHz

T

100

7

5

3

2

Gain-Bandwidth Product, f

°C

--40

ITR03604

FE

1000

DC Current Gain, h

100

10

Output Capacitance, Cob – pF

Ta=120

7

5

3

2

--3

--2 --5

5

3

2

7

5

°C

25

°C

°C

--40

--5

--7 --2

--10

Collector Current, IC–mA

--3

Cob -- V

CB

--7 --2

--100

--3

ITR03605

f=1MHz

--5

10

--3 --5 --7

--

10

--

7

--

5

--

3

--

2

(sat) – V

--

1.0

--

7

CE

--

5

--

3

--

2

--

0.1

--

7

Collector-to-Emitter

Saturation Voltage, V

--

5

--

3

--

5

--

3

--

7

7

--

--10

Collector Current, IC–mA

--5--2 --3 --5--3--2 --2

VCE(sat) -- I

--

--

--

2

10

Collector Current, IC–mA

5

--

3

--

7

--100

C

--

100

ITR03606

IC / IB=5

--

2

--

3

ITR03608

3

--1.0

--

0

10

--

7

--

5

--

3

--

2

(sat) – V

--2 --3 --5--5--7

Collector-to-Base Voltage, VCB-- V

VBE(sat) -- I

7

--

--10

--2 --3

ITR03607

C

IC / IB=5

0

BE

--

1.0

--

7

--

5

--

3

--

2

Base-to-Emitter

Saturation Voltage, V

--

--

5

0.1

--2--

--

5

3

--

7

--

10

Collector Current, IC–mA

--

--

5

2

--

3

--

7

--

--

100

2

--

ITR03609

--

5

3

No.1856-2/3