Sanyo 2SA1433 Specifications

Ordering number:EN3471

PNP Epitaxial Planar Silicon Transistor

2SA1433

High-Definition CRT Display Applications

Features

· HighTf (Gain-Bandwidth Product).

· Small reverse transfer capacitance (C=1.3pF). re

· Adoption of FBET process.

Package Dimensions

unit:mm

2006A

[2SA1433]

Specifications

Absolute Maximum Ratings at Ta = 25˚C

EIAJ : SC-51

B : Base

SANYO : MP

C :Collector

 

E : Emitter

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

–70

V

Collector-to-Emitter Voltage

VCEO

 

–60

V

Emitter-to-Base Voltage

VEBO

 

–4

V

Collector Current

IC

 

–50

mA

Collector Current (Pulse)

ICP

 

–100

mA

Collector Dissipation

PC

 

900

mW

Junction Temperature

Tj

 

150

˚C

 

 

 

 

 

Storage Temperature

Tstg

 

–55 to +150

˚C

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB=–40V, IE=0

 

 

(–)0.1

µA

Emitter Cutoff Current

IEBO

VEB=–3V, IC=0

 

 

(–)1.0

µA

DC Current Gain

hFE

VCE=–10V, IC=–10mA

60*

 

320*

 

Gain-Bandwidth Product

fT

VCE=–10V, IC=–10mA

350

700

 

MHz

Base-to-Collector Time Contact

rbb, 'cc

VCE=–10V, IC=–10mA

 

8

 

 

Output Capacitance

Cob

VCB=–10V, f=1MHz

 

1.7

 

pF

Reverse Transfer Capacitance

Cre

VCB=–10V, f=1MHz

 

1.3

 

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=–20mA, IB=–2mA

 

 

–0.6

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=–20mA, IB=–2mA

 

 

–1.0

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=–10µA, IE=0

–70

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=–1mA, RBE=

–60

 

 

V

Emitter-to-Base Breakdown Votage

V(BR)EBO

IE=–10µA, IC=0

–4

 

 

V

* : The 2SA1433 is classified by 10mA hFE as follows :

60 D 120 100 E 200 160 F 320

hFE rank : D, E, F

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/5280TA (KOTO) No.3471-1/2

Sanyo 2SA1433 Specifications

2SA1433

No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use:

Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of July, 1998. Specifications and information herein are subject to

change without notice.

PS No.3471-2/2

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