Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
60V/5A for High-Speed Drivers Applications
Ordering number:ENN1059D
2SA1259/2SC3145
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
查询2SC3145供应商
Features
· High fT.
· High switching speed.
· Wide ASO.
( ) : 2SA1259
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
esluPtnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2010C
[2SA1259/2SC3145]
10.2
3.6
18.0
OBC
OEC
OBE
PC
Tc=25˚C
5.6
2.55
5.1
2.7
1.2
0.8
123
2.7
2.55
4.5
1.3
6.3
15.1
14.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
07)–(V
06)–(V
5)–(V
5)–(A
8)–(A
57.1W
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
I
)tas(EC
C
I
)tas(EB
C
I,V04)–(=
0=1.0)–(Am
E
I,V5)–(=
0=3)–(Am
C
I,V2)–(=
A5.2)–(=00020005
C
I,V5)–(=
A5.2)–(=002zHM
C
I,A5.2)–(=
Am5)–(=
B
I,A5.2)–(=
Am5)–(=0.2)–(V
B
73102TN (KT)/71598HA (KT)/63095TS/D251MH/3187KI/2075KI/D222KI 8-4641 No.1059-1/4
sgnitaR
nimpytxam
)0.1–(
9.0
Continued on next page.
tinU
5.1)–(V
2SA1259/2SC3145
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
emiTesiRt
emiTegarotSt
emiTllaFt
Specified Test Circuit (for PNP, the polarity is reversed) Electrical Connection
PW=50µs, Duty Cycle≤1%
500IB1=--500IB2=IC=20A
R
INPUT
B
V
R
50
Ω
+
100µF
VBE=--5V VCC=20V
TUT
470µF
OUTPUT
R
10Ω
+
L
I
OBC)RB(
C
I
OEC)RB(
C
no
gts
f
I,Am5)–(=
0=07)–(V
E
R,Am05)–(=
=∞ 06)–(V
EB
tiucriCtseTdeificepseeS3.0sµ
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS2.0sµ
B
6kΩ
200Ω
2SA1259
B
6kΩ
200Ω
2SC3145
sgnitaR
nimpytxam
)3.1(
2.1
C
E
C
E
tinU
sµ
7
2SA1259
From top
6
--1000
IC -- V
µA
CE
--900µA
5
--800µA
–A
--700µA
C
--600µA
4
--500µA
3
µA
--400
2
Collector Current, I
1
0
012345
Collector-to-Emitter Voltage, VCE–V
--
6
--
5
–A
--
4
C
--
3
IC -- V
BE
µA
--300
µA
--200
=0
I
B
ITR03157
2SA1259
°C
Tc=25
VCE=--2V
7
6
5
–A
C
4
3
2
Collector Current, I
1
0
6
5
–A
4
C
3
IC -- V
CE
From top
1mA
500µA
450µA
400µA
350µA
300µA
250µA
200µA
Collector-to-Emitter Voltage, VCE–V
IC -- V
BE
2SC3145
=0
I
B
ITR03158
2SC3145
°C
Tc=25
VCE=2V
534120
--
2
Collector Current, I
--
1
0
--
0.6--0.8--1.0--1.2--1.4--1.6--1.8--2.0--2.2--2.4
Base-to-Emitter Voltage, VBE–V
ITR03159
2
Collector Current, I
1
0
Base-to-Emitter Voltage, VBE–V
2.41.6 2.00.8 1.20.4
ITR03160
No.1059-2/4