Ordering number:EN1056C
PNP Epitaxial Planar Silicon Transistors
2SA1256
High Frequency Amp Applications
Applications
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators, converters, and IF amplifiers.
Features
· High fT (230MHz typ), and small Cre (1.1pF typ).
· Small NF (2.5dB typ).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecaticapaCrefsnarTesreveRerCV
tnatsnoCemiTrotcelloC-ot-esaBr
erugiFesioNFNVECI,V6–=
niaGegatloVGPVECI,V6–=
* : The 2SA1256 is classified by 1mA hFE as follows :
0213E060814E090815E531
Note : Marking : E
hFE rank : 3, 4, 5
OBC
OEC
OBE
C
C
OBC
OBE
EF
T
bb
cC,'VECI,V6–=
Package Dimensions
unit:mm
2018B
[2SA1256]
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
03–V
02–V
5–V
03–Am
051W
˚C
˚C
sgnitaR
nimpytxam
V
BC
V
BE
V
EC
V
EC
BC
I,V01)–(=
0=1.0–Aµ
E
I,V4)–(=
0=1.0–Aµ
C
I,V6)–(=
Am1)–(=*06*072
C
I,V6)–(=
Am1)–(=051032zHM
C
zHM1=f,V6–=1.17.1Fp
C
C
C
zHM9.13=f,Am1–=1102sp
zHM001=f,Am1–=5.2Bd
zHM001=f,Am1–=22Bd
NF, PG Test Circuit
tinU
L1 : 1mmø plated wire 10mmø 5T, tap : 2T from VBE side
L2 : 1mmø plated wire 10mmø 7T, tap : 1T from VCE side
L3 : 1mmø enamel wire 10mmø 3T
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/40196TS (KOTO) 8-4689/3187AT/D064MW/8182KI, TS No.1056-1/4