SANYO 2SA1209 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications
Ordering number:EN779C
2SA1209/2SC2911
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Switching T est Circuit
IC=10IB1=–10IB2=10mA
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2009A
[2SA1209/2SC2911]
JEDEC:TO-126
OBC
OEC
OBE
Tc=25˚C
B:Base
C:Collector
E:Emitter
081)–(V
061)–(V
5)–(V
041)–(Am
002)–(Am
1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
V
OBC
OBE
EF
T
bo
no
f
gts
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
I,V08)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V5)–(=
C
I,Am05)–(=
Am01)–(=*001*004
I,V01)–(=
C
B
Am01)–(=051zHM
zHM1=f,V01)–(=0.3)0.4(Fp
Am5)–(=70.0
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS5.1sµ
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
002R001082S041004T002
71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/4
nimpytxam
sgnitaR
)41.0–(
tinU
3.0
V
)4.0–(
2SA1209/2SC2911
No.779-2/4
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