Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Audio 80W Output Predriver Applications
Ordering number:ENN781G
2SA1208/2SC2910
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast swtching speed.
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows : Continued on next page.
knaRRST
h
EF
002ot001082ot041004ot002
OBC
OEC
OBE
C
PC
C
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
Package Dimensions
unit:mm
2006B
[2SA1208/2SC2910]
6.0
5.0
0.5
0.6
6.0
0.5
23
1
1.45
1.45
I,V08)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V5)–(=
C
I,Am03)–(=
Am01)–(=*001*004
I,V01)–(=
C
B
Am01)–(=051zHM
zHM1=f,V01)–(=0.2)5.2(Fp
Am3)–(=
4.7
8.5
3.0
14.0
0.5
nimpytxam
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
sgnitaR
80.0
)41.0–(
081)–(V
061)–(V
5)–(V
07)–(Am
041)–(Am
009Wm
˚C
˚C
tinU
3.0
V
)4.0–(
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
Page 2
2SA1208/2SC2910
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTNO-nruTt
emiTllaFt
emiTegarotSt
no
f
gts
Switching Time Test Circuit
I
3kΩ
50Ω
B1
I
B2
5kΩ
1µF1µF
IN
OUT
2kΩ
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS2.0sµ
tiucriCtseTdeificepseeS0.1sµ
sgnitaR
nimpytxam
tinU
20V
--0.05mA
–mA
C
Collector Current, I
--60
--50
--40
--30
--20
--10
--0.3mA
--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
IC -- V
CE
--0.25mA
--0.2mA
--0.15mA
--0.1mA
IB=0
0
0 --10 --20 --30 --40 --50 --60 --70
Collector-to-Emitter Voltage, VCE–V
7
5
75
3
2
FE
100
7
5
DC Current Gain, h
3
2
25°C
--
25°C
°C
hFE -- I
C
2SA1208
VCE=
2SA1208 2SC2910
ITR03005
--5V
60
0.3mA
50
–mA
C
Collector Current, I
40
30
20
10
0.25mA
0.2mA
0
0 1020304050 7060
Collector-to-Emitter Voltage, VCE–V
7
5
3
2
FE
100
7
5
3
DC Current Gain, h
2
75
25°C
--
25°C
°C
IC -- V
0.15mA
hFE -- I
CE
0.1mA
0.05mA
IB=0
ITR03006
C
2SC2910
VCE=5V
10
57
--
1.0
Collector Current, IC–mA
523 7
10
--
10
523 7
ITR03007
--
100
57
1.0
Collector Current, IC–mA
523 7
10
523 7
ITR03008
100
No.781-2/4
Page 3
– MHz
T
100
2SA1208/2SC2910
fT -- I
5
3
2
C
2SA1208
VCE=--10V
– MHz
5
3
2
T
100
7
5
7
5
fT -- I
C
2SC2910
VCE=10V
3
2
Gain-Bandwidth Product, f
10
Collector Current, IC–mA
10
7
5
3
2
1.0
5775325732
Cob -- V
--10 --100--1.0
CB
Output Capacitance, Cob – pF
7
5
23 57 23 57
Collector-to-Base Voltage, VCB-- V
--1000
(sat) – mV
CE
2
7
5
3
2
VCE(sat) -- I
C
ITR03009
2SA1208
1MHz
f=
ITR03011
2SA1208
IC / IB=10
3
2
Gain-Bandwidth Product, f
10
Collector Current, IC–mA
10
7
5
3
2
1.0
5775325732
Cob -- V
10 1001.0
ITR03010
CB
2SC2910
f=1MHz
Output Capacitance, Cob – pF
7
5
--100--10
2 3 57 2 3 57
Collector-to-Base Voltage, VCB-- V
2
VCE(sat) -- I
C
ITR03012
2SC2910
10010
IC / IB=10
1000
7
5
(sat) – mV
CE
3
2
--100
7
5
Collector-to-Emitter
Saturation Voltage, V
3
--1.0
--80
--70
--60
–mA
--50
C
--40
--30
--20
Collector Current, I
--10
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
25°C
°C
75
°C
--25
2357
Collector Current, IC–mA
57 2 3 57
--10 --100
I
-- V
C
BE
°C
°C
75
25°C
--25
Base-to-Emitter Voltage, VBE–V
ITR03013
2SA1208
VCE=--5V
ITR03015
100
7
5
Collector-to-Emitter
Saturation Voltage, V
3
1.0
80
70
60
75
--25
2357
Collector Current, IC–mA
25
°C
°C
°C
57 2 3 57
10 100
I
-- V
C
BE
–mA
50
C
40
30
°C
°C
20
Collector Current, I
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE–V
75
25
°C
--25
ITR03014
2SC2910
VCE=5V
ITR03016
No.781-3/4
Page 4
2SA1208/2SC2910
7
5
3
(sat) – V
2
BE
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
57
--1.0 --10
3
2
ICP=140mA
100
IC=70mA
7
–mA
5
C
3
2
10
7
Collector Current, I
5
2SA1208 / 2SC2910
DC Single pulse
3
(For PNP, minus sign is omitted.)
2
57 72325
Collector-to-Emitter Voltage, VCE–V
VBE(sat) -- I
Collector Current, IC–mA
10 100
25°C
°C
--25
°C
75
722335 75
A S O
DC Operation
C
2SA1208
IC / IB=10
--100
ITR03017
7
5
3
(sat) – V
2
BE
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
57
1000
1.0 10
VBE(sat) -- I
C
25°C
°C
--25
°C
75
722335 75
Collector Current, IC–mA
P
-- Ta
C
2SC2910
IC / IB=10
100
ITR03018
2SA1208 / 2SC2910
100
10ms
m
s
1ms
–mW
C
800
600
400
200
Collector Dissipation, P
0
0 20 40 60 80 100 120 160140
ITR03019
Ambient Temperature, Ta – ˚C
ITR03020
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.781-4/4
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