Sanyo 2SA1177 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
HF Amp Applications
Ordering number:ENN851H
2SA1177
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Use
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators, converters, IF amplifiers.
Features
· High fT (230MHz typ.) and small Cre (1.1 pF typ.).
· Small NF (2.5dB typ.).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2033A
[2SA1177]
4.0
0.4
0.5
0.4
123
1.3
0.7
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
C
1.8
0.6
1.3
0.7
3.0
3.8
3.0
15.0
2.2
0.4
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
03–V
02–V
5–V
03–Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCkcabdeeFC
tnatsnoCemiTrotcelloC-ot-esaBr
erugiFesioNFNVECI,V6–=
niaGrewoPGPVECI,V6–=
EF
T
er
bbc,c
V
OBC
V
OBE
V
V
V
V
I,V01–=
BC
BE
EC
EC
BC
BC
0=1.0–Aµ
E
I,A4–=
0=1.0–Aµ
C
I,V6–=
Am1–=*06*023
C
I,V6–=
Am1–=051032zHM
C
zHM1=f,V6–=1.17.1Fp
I,V6–=
C
C
C
zHM9.13=f,Am1–=1102sp
zHM001=f,Am1–=5.2Bd
zHM001=f,Am1–=22Bd
* : 2SA1177 is classified as follows according to hFE at 1mA.
knaRDEF
h
EF
021ot06002ot001023ot061
70502TN (KT)/71598HA (KT)/3187AT,/3075KI/1313/8182/2172KI, TS No.851-1/5
sgnitaR
nimpytxam
tinU
NF, PG Test Circuit
to 5pF
L3
L2
to 30pF
0.01µF
OUTPUT
50Ω
INPUT 50Ω
to 30pF
L1
0.01µF
to 22pF
V
BE
to
22pF
L1 ; 1mmø plated wire 10mmø 5T, tapped at 2T from VBE side.
L2 ; 1mmø plated wire 10mmø 7T, tapped at 1T from VCE side.
L3 ; 1mmø enameled wire 10mmø 3T.
2SA1177
V
CE
--1 0
--8
IC -- V
–mA
C
--6
--4
Collector Current, I
--2
0
0 --2 --4 --6 --8 --10
CE
--70
--60
--50
--40
--30
--20
µ
--10
A
A
µ
A
µ
A
µ
A
µ
µ
µ
IB=0
A
A
Collector-to-Emitter Voltage, VCE–V
5
3
2
hFE -- I
V
=
CE
--
12V
C
--
6
V
FE
--
3
CB
V
--
10
55732
--1 0--0 .1
100
7
5
3
DC Current Gain, h
2
0
2357
--
0.1
10
7
5
3
2
1.0
Feedback Capacitance, Cre – pF
7
5
Collector-to-Base Voltage, VCB-- V
--
1.0
Collector Current, IC–mA
Cre -- V
573223
--1 .0
ITR02968
2352357
ITR02970
f=1MHz
ITR02972
--
120
--
100
--
80
– µA
B
--
60
--
40
Base Current, I
--
20
0
0
2
1000
– MHz
7
T
5
3
2
100
Gain-Bandwidth Product, f
7
--
1.0
2
100
'Cc–ps
7
bb
5
3
2
10
7
5
3
Base-to-Collector Time Constant, r
2
IB -- V
BE
VCE=--6V
--
0.2
Base-to-Emitter Voltage, VBE–V
23 57
--
0.4
fT -- I
Collector Current, IC–mA
rbb' Cc -- I
--
0.6
C
V
=
--
12V
CE
--
10
C
--
0.8
23 5
ITR02969
--
6V
--
3V
ITR02971
--
1.0
f=31.9MHz
3V
--
=
CE
V
6V
--
12V
--
573223
--1 .0
Collector Current, IC–mA
55732
--10--0 .1
ITR02973
No.851-2/5
Loading...