Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
HF Amp Applications
Ordering number:ENN851H
2SA1177
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Use
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators, converters, IF amplifiers.
Features
· High fT (230MHz typ.) and small Cre (1.1 pF typ.).
· Small NF (2.5dB typ.).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2033A
[2SA1177]
4.0
0.4
0.5
0.4
123
1.3
0.7
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
C
1.8
0.6
1.3
0.7
3.0
3.8
3.0
15.0
2.2
0.4
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
03–V
02–V
5–V
03–Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCkcabdeeFC
tnatsnoCemiTrotcelloC-ot-esaBr
erugiFesioNFNVECI,V6–=
niaGrewoPGPVECI,V6–=
EF
T
er
bbc,c
V
OBC
V
OBE
V
V
V
V
I,V01–=
BC
BE
EC
EC
BC
BC
0=1.0–Aµ
E
I,A4–=
0=1.0–Aµ
C
I,V6–=
Am1–=*06*023
C
I,V6–=
Am1–=051032zHM
C
zHM1=f,V6–=1.17.1Fp
I,V6–=
C
C
C
zHM9.13=f,Am1–=1102sp
zHM001=f,Am1–=5.2Bd
zHM001=f,Am1–=22Bd
* : 2SA1177 is classified as follows according to hFE at 1mA.
knaRDEF
h
EF
021ot06002ot001023ot061
70502TN (KT)/71598HA (KT)/3187AT,/3075KI/1313/8182/2172KI, TS No.851-1/5
sgnitaR
nimpytxam
tinU
Page 2
NF, PG Test Circuit
to 5pF
L3
L2
to 30pF
0.01µF
OUTPUT
50Ω
INPUT 50Ω
to 30pF
L1
0.01µF
to 22pF
V
BE
to
22pF
L1 ; 1mmø plated wire 10mmø 5T, tapped at 2T from VBE side.
L2 ; 1mmø plated wire 10mmø 7T, tapped at 1T from VCE side.
L3 ; 1mmø enameled wire 10mmø 3T.
2SA1177
V
CE
--1 0
--8
IC -- V
–mA
C
--6
--4
Collector Current, I
--2
0
0 --2 --4 --6 --8 --10
CE
--70
--60
--50
--40
--30
--20
µ
--10
A
A
µ
A
µ
A
µ
A
µ
µ
µ
IB=0
A
A
Collector-to-Emitter Voltage, VCE–V
5
3
2
hFE -- I
V
=
CE
--
12V
C
--
6
V
FE
--
3
CB
V
--
10
55732
--1 0--0 .1
100
7
5
3
DC Current Gain, h
2
0
2357
--
0.1
10
7
5
3
2
1.0
Feedback Capacitance, Cre – pF
7
5
Collector-to-Base Voltage, VCB-- V
--
1.0
Collector Current, IC–mA
Cre -- V
573223
--1 .0
ITR02968
2352357
ITR02970
f=1MHz
ITR02972
--
120
--
100
--
80
– µA
B
--
60
--
40
Base Current, I
--
20
0
0
2
1000
– MHz
7
T
5
3
2
100
Gain-Bandwidth Product, f
7
--
1.0
2
100
'Cc–ps
7
bb
5
3
2
10
7
5
3
Base-to-Collector Time Constant, r
2
IB -- V
BE
VCE=--6V
--
0.2
Base-to-Emitter Voltage, VBE–V
23 57
--
0.4
fT -- I
Collector Current, IC–mA
rbb' Cc -- I
--
0.6
C
V
=
--
12V
CE
--
10
C
--
0.8
23 5
ITR02969
--
6V
--
3V
ITR02971
--
1.0
f=31.9MHz
3V
--
=
CE
V
6V
--
12V
--
573223
--1 .0
Collector Current, IC–mA
55732
--10--0 .1
ITR02973
No.851-2/5
Page 3
--
10
7
5
3
2
(sat) – V
--
1.0
CE
7
5
3
2
--
0.1
7
Collector-to-Emitter
Saturation Voltage, V
5
3
2335357
--
0.1
2
1.0
7
5
3
2
– mS
ie
g
0.1
7
5
3
2
7
5
3
2
1.0
7
– mS
ie
5
g
3
2
2SA1177
P
VCE(sat) -- I
C
200
160
150
–mW
C
120
20
=
0
B
1
/I
C
I
5
80
40
Collector Dissipation, P
0
57
Collector Current, IC–mA
Input Admittance
--
1.0
Collector Current, IC– mA Collector Current, IC–mA
Input Admittance
2
--
1.0
y
ie
ie
c
g
ie
y
ie
ie
g
ie
c
--
10
-- I
-- I
2
ITR02974
C
f=1.0MHz
VCE=--6V
723 55
ITR02976
C
f=10MHz
VCE=--6V
2
100
7
5
3
– pF
2
ie
c
10
7
5
3
2
--
10
5
3
2
100
7
– pF
ie
5
c
3
2
0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C
5
3
2
10
– µS
7
oe
5
g
3
2
1.0
100
7
5
3
2
– µS
10
7
oe
g
5
3
2
Output Admittance
7
--
1.0
Output Admittance
f=10MHz
VCE=--6V
C
g
-- Ta
g
oe
oe
y
c
oe
y
c
oe
oe
oe
-- I
f=1.0MHz
VCE=--6V
-- I
C
C
ITR02975
723 55
ITR02977
5
3
2
10
– pF
7
oe
5
c
3
2
1.0
--
10
100
7
5
3
2
– pF
10
7
oe
c
5
3
2
– mS
ie
g
0.1
100
7
5
3
2
10
7
5
3
2
1.0
57
3
10
--
1.0
Collector Current, IC– mA Collector Current, IC–mA
Input Admittance
ie
c
g
--
1.0
Collector Current, IC– mA Collector Current, IC–mA
-- I
y
ie
ie
723 5
ITR02978
C
f=100MHz
VCE=--6V
732575
ITR02980
--
10
100
7
5
3
2
– pF
10
ie
7
c
5
3
2
1.0
--
10
– mS
oe
g
1.0
5
3
2
1.0
7
5
3
2
0.1
57
Output Admittance
3
--
1.0
y
c
oe
g
oe
--
1.0
oe
-- I
C
f=100MHz
VCE=--6V
723 5
--
10
ITR02979
732575
--
ITR02981
No.851-3/5
1.0
5
3
2
1.0
– pF
7
oe
5
c
3
2
0.1
10
Page 4
Forward Transfer Admittance
3
f=100MHz
2
VCE=--6V
100
7
5
3
– mSg
2
fe
g
10
7
5
3
2
– mS
ie
3
5
3
2
10
7
5
3
2
--1.0
Collector Current, IC– mA Collector Current, IC–mA
Input Admittance
2SA1177
-- I
y
fe
C
3
2
100
7
5
732575
ITR02982
--10
3
– mS
2
fe
b
10
7
5
3
2
5
3
2
10
– pFb
7
ie
5
c
3
2
fe
g
fe
--b
y
-- V
ie
CE
f=100MHz
IC=--1.0mA
c
ie
g
ie
Reverse Transfer Admittance
3
2
1.0
7
5
3
– mS
re
2
g
0.1
7
5
– mS
oe
g
3
10
7
5
3
2
1.0
7
5
3
2
7
--1.0
Output Admittance
--c
re
--
g
re
235 735
y
oe
c
oe
g
oe
y
re
f=100MHz
VCE=--6V
-- V
CE
f=100MHz
IC=--1.0mA
-- I
ITR02983
C
3
2
1.0
7
5
– pF
3
re
2
c
0.1
7
5
3
--10
10
7
5
3
2
– pF
1.0
oe
7
c
5
3
2
1.0
7
--1.0
Collector-to-Emitter Voltage, VCE– V Collector-to-Emitter Voltage, VCE–V
Forward Transfer Admittance
5
3
2
10
– mS
7
fe
5
g
3
2
1.0
7
--1.0
Collector-to-Emitter Voltage, VCE– V Collector-to-Emitter Voltage, VCE–V
32
28
24
Power Gain,PG – dB
20
PG, NF -- I
32275
g
fe
--b
fe
PG
--10
ITR02984
-- V
y
fe
CE
f=100MHz
IC=--1.0mA
72235
--10
ITR02986
C
At specified circuit.
f=100MHz
VCE=--6V
1.0
5
3
2
10
7
– mS
fe
5
3
2
1.0
6
0.1
7
--1.0
Reverse Transfer Admittance
5
3
2
1.0
7
– mS
5
re
g
3
--
g
re
0.1
2
7
5
7
--1.0
32275
--c
re
72235
y
re
--10
-- V
f=100MHz
IC=--1.0mA
--10
ITR02985
CE
ITR02987
0.1
5
3
2
1.0
7
– pF
5
re
c
3
2
0.1
7
5
NF
57
--
1.0
Collector Current, IC–mA
4
2
Noise Figure,NF – dB
0
72335
--
10
ITR02988
No.851-4/5
Page 5
2SA1177
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.851-5/5
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