Sanyo 2SA1016, 2SC2362K Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Low-Noise Amp Applications
Ordering number:ENN572E
2SA1016, 1016K/2SC2362, 2362K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Package Dimensions
unit:mm
2003B
[2SA1016, 1016K/2SC2362, 2362K]
1 : Emitter
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoC2632CS2,6101AS2
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
PC
C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows : Continued on next page.
knaRFGH
h
EF
023ot061065ot082069ot084
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I,V08)–(=
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
I,V6)–(=
Am1)–(=*061*069
C
I,V6)–(=
Am1)–(=
C
zHM1=f,V01)–(=
021)–(051)–(V
001)–(021)–(V
nimpytxam
2 : Collecor
3 : Base
SANYO : NP
,K6101AS2
K2632CS2
sgnitaR
)011(
031
)2.2(
8.1
tinU
5)–(V
05)–(Am
001)–(Am
004Wm
˚C
˚C
tinU
zHM
Fp
70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4
Continued from preceding page.
retemaraPlobmySsnoitidnoC
leveLesioNV
leveLkaePesioNV
2SA1016, 1016K/2SC2362, 2362K
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloC(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
C
OBC)RB
I
C
I
C
OEC)RB(
I
C
I
OBE)RB(
E
V
)eva(ON
CC
V
)kaep(ON
CC
I,Am01)–(=
Am1)–(=5.0)–(V
B
I,Aµ01)–(=
E
I,Aµ01)–(=
E
R,Am1)–(=
=∞ ]2632C,6101A[001)–(V
EB
R,Am1)–(=
=∞ ]K2632C,K6101A[021)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
I,V03=
R,Am1=
C
I,V03=
C
k65= Ω V,
g
R,Am1=
g
k65= Ω,
G
GV
sgnitaR
nimpytxam
]2632C,6101A[0=021)–(V
]K2632C,K6101A[0=051)–(V
zHk1/Bd77=53Vm
zHk1/Bd77=002Vm
tinU
A
--300
IC -- V
A
µ
--250
--12
--10
–mA
--8
C
--6
--4
Collector Current, I
--2
0
0 --10 --20 --30 --40
--350
µ
A
µ
--200
CE
A
µ
--150
--100
Collector-to-Emitter Voltage, VCE–V
IB -- V
--100
2SA1016, 1016K
VCE=
--80
– µA
--60
B
--40
--5V
BE
2SA1016, 1016K
A
µ
A
µ
A
µ
--50
IB=0
ITR02951
--50
12
10
–mA
8
C
6
4
Collector Current, I
2
0
01020304050
IC -- V
Collector-to-Emitter Voltage, VCE–V
100
2SC2362, 2362K
IB -- V
CE
250
BE
200
µ
150
A
µ
100
2SC2362, 2362K
A
A
µ
A
µ
A
µ
50
IB=0
ITR02952
VCE=5V
80
– µA
60
B
40
Base Current, I
--20
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE–V
fT -- I
C
10
2SA1016, 1016K
--6V
VCE=
– MHz
T
100
Gain-Bandwidth Product, f
5
3
2
7
5
3
2
1.0
Collector Current, IC–mA
ITR02953
ITR02955
Base Current, I
20
0
Base-to-Emitter Voltage, VBE–V
5
3
– MHz
2
T
100
7
5
Gain-Bandwidth Product, f
3
5325732
2
1.0
2352
Collector Current, IC–mA
fT -- I
375
0.6 0.8 1.00.20 0.4
ITR02954
C
2SC2362, 2362K
VCE=6V
10
ITR02956
No.572-2/4
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