Ordering number : ENN*6949
Preliminary
1SV298H
Silicon Epitaxial PIN Diode
1SV298H
π Type Attenuator Applications
Features
•
Composite type with 3 diodes contained in the
CPH package currently in use, improving the
Package Dimensions
unit : mm
1307
mounting efficiency greatly.
• Small interterminal capacitance (C=0.23pF typ).
Electrical Connection
43
1 : Cathode / Cathode
2 : Anode
12
3 : Anode / Cathode
4 : Anode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Ratings Unit
Reverse Voltage V
Forward Current I
Allowable Power Dissipation P 150 mW
Junction T emperature Tj 125 °C
Storage Temperature Tstg --55 to +125 °C
R
F
50 V
50 mA
[1SV298H]
0.4
34
1.6 0.60.6
1
1.9
2.9
2
0.2
0.7
0.15
2.8
1 : Cathode/Cathode
2 : Anode
3 : Anode/Cathode
4 : Anode
0.9
SANYO : CPH4
0.2
0.05
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Reverse Voltage V
Reverse Current I
Forward Voltage V
Interterminal Capacitance C VR=50V, f=1MHz 0.23 pF
Series Resistance rs
Note)The specifications shown above are for each individual diode.
Marking : VA
R
IR=10µA50V
R
VR=50V 0.1 µA
IF=50mA 0.92 0.97 V
F
IF=10µA, f=100MHz 2400 Ω
IF=10mA, f=100MHz 5 7 Ω
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41601 GI IM /
No.6949-1/3
Unit
I
-- V
F
25°C
-- V
R
50°C
25°C
rs -- I
F
--55°C
F
-- V
IT00993
R
R
-- V
IT00995
F
F
-- mA
IT01010
100
7
5
3
2
10
7
-- mA
5
F
3
2
1.0
7
5
3
2
0.1
Forward Current, I
7
5
3
2
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta=125°C
Forward Voltage, V
5
3
2
10
7
5
-- nA
3
R
2
1.0
7
5
3
2
0.1
7
Reverse Current, I
5
3
2
0.01
0102030405060
I
Ta=75°C
Reverse Voltage, V
10000
7
5
3
2
1000
7
-- Ω
5
3
2
100
7
5
3
2
10
Series Resistance, rs
5
3
2
1.0
2
577
0.01 0.1 1.0 10
325732573
Forward Current, I
1SV298H
C -- V
R
-- pF
1.0
7
5
3
2
Interterminal Capacitance, C
0.1
0.1 1.0 10 100
10000
7
5
3
2
1000
7
5
3
2
-- Ω
100
7
5
3
Series Resistance, rs
2
5
3
25732
7
Reverse Voltage, V
rs -- f
I
=10µA
F
100µA
1mA
R
2573
-- V
5mA
10
7
3
2
1.0
3
10mA
557
10 100 10001.0
Frequency, f -- MHz
257325732
f=1MHz
Ta=25°C
IT00994
IT00996
No.6949-2/3