Sanyo 15GN03MA User Manual
Ordering number : ENA1108
15GN03MA
SANYO Semiconductors
NPN Epitaxial Planar Silicon Transistor
15GN03MA
VHF High-frequency Amplifier Applications
Applications
•
VHF, RF, MIXER, OSC, IF amplifier.
Features
•
High cut-off frequency: fT=1.5GHz typ.
•
High gain : ⏐S21e⏐2=13dB typ (f=0.4GHz).
•
Ultrasmall package permitting applied sets to be small and slim.
DATA SHEET
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction Temperature Tj 150 °C
Storage T emperature Tstg --55 to +150 °C
CBO
CEO
EBO
C
C
When mounted on ceramic substrate (250mm2✕0.8mm)
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Marking : ZC Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
CBO
EBO
FE
T
VCB=10V, IE=0A 0.1 μA
VEB=2V, IC=0A 1 μA
VCE=5V, IC=10mA 100 180
VCE=5V, IC=20mA 1.0 1.5 GHz
min typ max
Ratings
'
s products or
20 V
10 V
3V
70 mA
400 mW
Unit
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001669
No. A1108-1/6
15GN03MA
Continued from preceding page.
Parameter Symbol Conditions
Output Capacitance Cob VCB=10V, f=1MHz 0.95 1.25 pF
Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.65 pF
Forward Transfer Gain
Noise Figure NF VCE=3V, IC=2mA, f=0.4GHz 1.6 dB
S21e
⏐
2
VCE=5V, IC=20mA, f=0.4GHz 10 13 dB
⏐
min typ max
Ratings
Package Dimensions
unit : mm (typ)
7023-009
Unit
0.425
2.1
1.25
12
0.425
0.3
3
0.65 0.65
2.0
0.3
0.15
0.9
0.2
0 to 0.1
0.6
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
I
-- V
100
90
80
70
-- mA
C
60
50
40
30
Collector Current, I
20
10
0
0246810
C
Collector-to-Emitter Voltage, V
3
2
h
FE
CE
FE -- IC
CE
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB=0mA
-- V
VCE=5V
IT08096
I
-- V
80
70
60
C
BE
-- mA
50
C
40
30
20
Collector Current, I
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
fT -- I
C
-- GHz
T
3
2
VCE=5V
IT08097
VCE=5V
100
DC Current Gain, h
7
5
1.0
23 57
10
23 57
Collector Current, IC -- mA
100 1.0
IT08098
1.0
7
5
Gain-Bandwidth Product, f
3
23 57
Collector Current, IC -- mA
10
23 57
IT08099
100
No. A1108-2/6
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