SanRex SQD400BA60 Datasheet
57
SQD400BA60
TRANSISTOR MODULE
Hi-
UL;E76102 M
T
hermal Impedance
(junction to case)
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
SQD400BA60
Unit
VCBO Collector-Base Voltage 600 V
VCEX Collector-Emitter Voltage
VBE 2V
600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 400 800
A
IC
Reverse Collector Current 400 A
I
B
Base Current 24 A
P
T
Total power dissipation
TC 25
1500 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal
M6
Recommended Value 43kgf B
4.7 (48)
Recommended Value 43kgf B
4.7 (48)
Terminal
M4
Recommended Value 12.5kgf B
1.5 (15)
N m
(
f B)
Mass Typical Value 460 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
4.0
1600
750
2.5
3.0
2.0
8.0
2.0
1.8
0.083
0.25
Unit
I
CBO
Collector Cut-off Current
VCBV
CBO
mA
I
EBO
Emitter Cut-off Current
VEBV
EBO
mA
450
V
CEO SUS
V
CEX SUS
Collector Emitter Sustaning
Voltage
Ic 1A
600
Ic 80A I
B2
8A
V
h
FE
DC Current Gain
Ic 400A VCE2.5V
V
CE sat
Collector-Emitter Saturation Voltage
Ic 400A IB530mA
V
V
BE sat
Base-Emitter Saturation Voltage
Ic 400A IB530mA
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc 300V Ic 400A
I
B1
0.8A I
B2
8A
Ic 400A
V
ECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200 ns
Vcc 300V, Ic 400A, di/dt 300A/ s, VBE5V
trr Reverse Recovery time
SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr
200ns). The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
IC 400A, VCEX 600V
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain hFE. hFE750
Isolated mounting base
IV
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo,
UPS, Switching
Power Supply, Ultrasonic Application
58
SQD400BA60
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