51
SQD400AA100
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
SQD400AA100 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The
mounting base of the module is electrically isolated from Semiconductor elements for
simple heatsink construction.
IC=400A, VCEX=1000V
Low saturation voltage High DC current gain
Isolated monuting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
SQD400AA100
Unit
VCBO Collector-Base Voltage 1000 V
VCEX Collector-Emitter Voltage
VBE 2V
1200 V
VCEX SUS
Collector-Emitter Sustaning Voltage
IC 80A IB 18A
1000 V
Emitterr-Base Voltage
VVEBO 10
IC Collector Current 400 A
IC
Reverse Collector Current 400 A
I
B
Base Current 20 A
P
T
Total power dissipation
TC 25
3120 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C. 1minute 2500 V
Mounting Torque
Mouting M6
Terminal
M8
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 8.8 10 90 105 11 115
Terminal
M4 Recommended Value 1.0 1.4 10 14 1.5 15
N m
(
f B)
Mass Typical Value 670 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
3.0
1000
75
100
2.5
3.5
3.0
16.0
3.0
1.8
0.04
0.16
Unit
I
CBO
Collector Cut-off Current
VCB1000V
mA
I
EBO
Emitter Cut-off Current
VEB10V
mA
h
FE
Ic 300A VCE2.8V
DC Current Gain
Ic 400A VCE5V
V
CE sat
Collector-Emitter Sturation Voltage
Ic 400A IB8A
V
V
BE sat
Base-Emitter Saturation Voltage
Ic 400A IB8A
V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 400A
I
B1 8A IB2 8A
Ic 400A
Transistor part
Diode part
V
ECO
Rth j-c
Switching Time
Collector-Emitter Reverse Voltage