45
SQD300A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj 25
Symbol Item Conditions
Ratings
SQD300A40 SQD300A60
Unit
VCBO Collector-Base Voltage 400 600 V
VCEX Collector-Emitter Voltage
VBE 2V
400 600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 300 600
A
IC
Reverse Collector Current 300 A
I
B
Base Current 18 A
P
T
Total power dissipation
TC 25
1380 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M6
Terminal M4
Recommended Value 2.5 3.9 25 40
4.7 48
Recommended Value 2.5 3.9 25 40
Recommended Value 1.0 1.4 10 14
4.7 48
1.5 15
N m
(
f B)
Mass Typical Value 460 g
Unit A
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
Min. Max.
3.0
1000
75
2.0
2.5
2.0
12.0
3.0
1.4
0.09
Unit
ICBO Collector Cut-off Current
VCBV
CBO
mA
IEBO Emitter Cut-off Current
VEBV
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
SQD300A40
SQD300A60
SQD300A40
SQD300A60
Ic 1A
V
450
400
V
CEX SUS
Ic 60A I
B2
10A
V
600
h
FE
DC Current Gain
Ic 300A VCE2V
Ic 300A VCE5V
100
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 300A IB4.0A
V
V
BE(sat) Base-Emitter Saturation Voltage
Ic 300A IB4.0A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
0.3Diode part
ts
tf
Vcc 300V Ic 300A
I
B1
6A I
B2
6A
Ic 300A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
SQD300A is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
IC 300A, VCEX 400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application