16
SF100CB100
MOSFET MODULE
UL;E76102 M
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications
of high voltage and current. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction.
ID100A, V
DSS
1000V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
trr300ns
Applications
UPS CVCF , Motor Control, Switching Power Supply, etc.
Unit
A
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions
Ratings
SF100CB100
Unit
V
DSS
Drain-Source Voltage 1000 V
V
GSS
Gate-Source Voltage
30
V
I
D
Drain
Current
DC
Pulse
100
A
I
DP
200
I
D
Reverse Drain Current 100 A
P
T
Total Power Dissipation
Tc 25
800 W
Tj Channel Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S.
A.C. 1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M6
Recommended Value
N m
kgf B
Recommended Value 2.5 3.9 25 40 4.7 48
Terminal M4
Recommended Value 1.0 1.4 10 14 1.5 15
Mass Typical Value 460 g
Symbol Item Conditions
Ratings
Min. Typ. Max.
1000
Unit
I
GSS
Gate Leakage Current
V
GS
20V VDS0V
A
4.0I
DSS
Zero Gate Voltage Drain Current
VGS0V VDS800V
mA
1000V
BR DSS
Darin-Source Breakdown Voltage
VGS0V ID1mA
V
1.5 3.5V
GS th
Gate-Source Threshold Voltage
VDSVGSID10mA
V
150R
DS on
Drain-Source On-State Resistance
ID100A VGS15V m
15V
DS on
Drain-Source On-State Voltage
ID100A VGS15V
V
30 50gfs Forward Transconductance
VDS10A VD75A
S
16000 19200Ciss Input Capacitance
VGS0V VDS25V f 1.0MHz
pF
2900 4200Coss Output Capacitance
VGS0V VDS25V f 1.0MHz
pF
1800 2600Crss
Reverse Transfer Capacitance
VGS0V VDS25V f 1.0MHz
pF
150
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
RL6 VGS15V/ 5V
I
D
100A RG2.2
ns
300
td on
600
tf 300
td off
1.8V
SDS
Diode Forward Voltage
ID100A VGS0V
V
300trr Reverse Recovery Time
IS100A VGS15V di/dt 400A/s
ns
0.16
0.64
Rth j-c
Thermal Resistance
MOSFET
Diode
/W
17
SF100CB100
18
SF100CB100
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