SanRex QF50AA40, QF50AA60 Datasheet
65
QF50AA40/60
TRANSISTOR MODULE
THREE PHASES BRIDGE TYPE
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QF50AA40 QF50AA60
Unit
VCBO Collector-Base Voltage 400 600 V
VCEX Collector-Emitter Voltage
VBE 2V
400 600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 50 100
A
IC
Reverse Collector Current 50 A
I
B
Base Current 3 A
P
T
Total power dissipation
TC 25
300 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal
M4
Recommended Value 1.5 2.5 15 25 2.7 28
Recommended Value 1.0 1.4 10 14 1.5 15
N m
f B
Mass Typical Value 400 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
1.0
300
75
100
2.0
2.5
1.0
12.0
2.0
1.4
0.4
1.3
Unit
ICBO Collector Cut-off Current
VCBV
CBO
mA
IEBO Emitter Cut-off Current
VEBV
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
QF50AA40
QF50AA60
QF50AA40
QF50AA60
Ic 1A
V
450
400
V
CEX SUS
Ic 10A I
B2
5A
V
600
h
FE
DC Current Gain
Ic 50A VCE2V
Ic 50A VCE5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 50A IB0.67A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 50A IB0.67A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc 300V Ic 50A
I
B1
1A I
B2
1A
Ic 50A
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QF50AA is six pack Darlington power transistor module which has six transistors
connected in three phase bridge configuration. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC50A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC Servo, UPS
66
QF50AA40/60
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