31
GSA400BA60
IGBT MODULE
Unit mm
SanRex IGBT Module GSA400BA60 is designed for high speed, high current
switching applications. This Module is electrically isolated and with a fast switching, soft
recovery diode (trr=0.1
s) reverse connected across each IGBT.
Ic 400A V
CES
600V
V
CE sat
2.3V Typ
tf 0.10 s Typ
Soft recovery diode
Applications
Inverter for motor control (VVVF)
UPS, AC servo
DC power supply, Welder
Maximum Ratings Unless otherwise Tj 25
Symbol Item
V
CES
Collector-Emitter Voltage
Conditions
with gate terminal shorted to emitter
Ratings
GSA400BA60
Unit
V600
V
GES
Gate-Emitter Voltage with collector shorted to emitter V
20
Ic
Collector
Current
DC
Pulse ms
A
400
I
CP
800
Ic
Reverse Collector Current A400
P
T
Total Power Dissipation
Tc 25
W1500
Tj Junction Temperature 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S. A.C. minute
V2500
Mounting
Torque
Mounting Base 6
Terminal
4
Recommended Value 2.5 3.9 25 40
N m
kgf cm
4.7 48
Recommended Value 2.5 3.9 25 40
4.7 48
Recommended Value 1.0 1.4 10 14 1.5 15
Mass Typical Value g400
Eiectrical Characteristics Unless otherwise Tj 25
Symbol Item
I
GES
Gate Leakage Current
Conditions
V
GE
20V VCE0V
Ratings
Min. Typ. Max.
Unit
nA
500
I
CES
Collector Cut-Off Current
VCE600V VGE0V
mA1.00
V
BR CES
Collector-Emitter Breakdown Voltage
VGE0V Ic 1mA
V600
V
GE th
Gate Threshold Voltage
VCE5V Ic 40mA
V3.0
2.30
7.00
V
CE sat
Collector-Emitter Saturation Voltage
Ic 400A VGE15V
V
32.000
2.80
Cies Input Capacitance
VCE10V VGE0V f 1MHz
nF
0.10
40.000
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Ic 400A V
GE
15V/ 5V
Vcc
300V RG1.6
s
0.20
0.20
td on
0.10
0.40
tf
Emitter-Collector Voltage
0.40
0.20
td off
2.30
0.80
V
ECS
Ic 400A VGE0V
V
0.10
2.80
trr Reverse Recovery Time
Ic 400A V
GE
10V di/ dt 800A/ s
s
0.15
Rth j-c
Thermal Resistance
IGBT-Case
/W
0.08
Diode-Case 0.20
UL;E76102 M
Terminal
6