67
GH-038
HYBRID GATE DRIVER IC FOR IGBT
SanRex
Hybrid Gate Driver IC for IGBT
High Voltage isolation by Photo Coupler
Enable to drive IGBT up to dual 300A module
Operate with single power source
Support to high-density system design
Built-in opto coupler input resistor 330
Maximum Ratings Unless otherwise Tj 25
Equivalent Circuit
Symbol Item
V
CC
Supply Voltage
Conditions
Ratings
Min. Typ. Max.
Unit
V23.0 26.0 28.0
V
OH
Forward Bias Output Voltage
VCC26.0V
V16.0 18.0 19.0
V
RB
Reverse Bias Supply Voltage
VCC26.0V
V07.0 08.0 09.0
V
FIN
Photo Coupler Input Voltage V05.0 07.0
I
F
Photo Coupler Input Current
V
FIN
5.0V
mA09.0 10.6 12.2
Ig1
Output Forward
Current
PW 2 s Dutycycle 0.05
A04.0 06.0
Ig2 Output Reverse Current
PW 2 s Dutycycle 0.05
A04.0 06.0
tPLH
Switching Time-High side
VCC26.0V IF10mA s
01.5
tPHL
Switching Time-Low side
VCC26.0V IF10mA s
01.5
t
r
Rise Time
VCC26.0V IF10mA s
01.0
t
f
Fall Time
VCC26.0V IF10mA s
01.0
5k 10kdv/dt
Common Mode Transient immunity
V/ s
Visc
Input Output Isolation Voltage
AC50/60HZ1minute
V
Topr
Operational Ambient Temperature
Tstg Storage Temperature
AC2500
25 80
40 125
The model name is indicated on the back of the product.
68
GH-038
Examble of Application
1 To assure required voltage the capacitor >10 F hase to be connected as close to the Driver IC as possible.
2 For the value of gate resistor, the resistance value described in IGBT Module specification is recommended. The gate resistance
should be determined at less than 6A of peak output current judging from signal delay time and surge voltage.
Switching wave form