SanRex GAE300BA60 Datasheet
52
GAE300BA60
IGBT MODULE
SanRex IGBT Module GAE300BA60 is designed for high speed, high current
switching applications. This Module is electrically isolated and contains IGBT connected
with clamp diode in series, soft recovery diode (trr=0.1
s) reverse connected across
IGBT.
IC300A V
CES
600V
V
CES sat
2.4V Typ
tf 0.10 s Typ
Soft recovery diode
Applications
Brake for motor control (VVVF)
Unit mm
Maximum Ratings Unless otherwise Tj 25
Symbol Item
V
CES
Collector-Emitter Voltage
Conditions
with gate terminal shorted to emitter
Ratings
GAE300BA60
Unit
V600
V
GES
Gate-Emitter Voltage with collector shorted to emitter V
20
Ic
Collector
Current
DC
Pulse ms
A
300
I
CP
600
Ic
Reverse Collector Current A300
P
T
Total Power Dissipation
Tc 25
W1100
Tj Junction Temperature 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S. A.C. minute
V2500
Mounting
Torque
Mounting
6
Terminal
5
Recommended Value 2.5 3.9 25 40
N m
kgf cm
4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
Mass Typical Value g225
Electrical Characteristics
Symbol Item
I
GES
Gate Leakage Current
Conditions
V
GE
20V VCE0V
Ratings
Min. Typ. Max.
Unit
nA
500
I
CES
Collector Cut-Off Current
VCE600V VGE0V
mA1.00
V
BR CES
Collector-Emitter Breakdown Voltage
VGE0V Ic mA
V600
V
GE th
Gate Threshold Voltage
VCE10V Ic 30mA
V3.0
2.40
7.00
V
CE sat
Collector-Emitter Saturation Voltage
Ic 300A VGE15V
V
20
2.80
Cies Input Capacitance
VCE10V VGE0V f 1MHz
nF
0.10tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Ic 300A V
GE
15V/ 5V
Vcc
300V RG2
s
0.20
0.20
td on
0.10
0.40
tf
Emitter-Collector Voltage
0.40
0.20
td off
2.30
0.80
V
ECS
Ic 300A VGE0V
V
0.10
2.80
trr Reverse Recovery Time
Ic 300A V
GE
10V di/ dt 600A/ s
s
2.30V
FM
Forward Voltage Drop
IF 300A, Clamp Diode
2.80
0.10trr Reverse Recovery Time
IF 300A diF/ dt 600A/ s, Clamp Diode
0.15
Rth j-c
Thermal Impedance Clamp Diode 0.40
Rth j-c
Thermal Resistance
IGBT-Case
/W
V
s
/W
0.11
Diode-Case 0.40
UL;E76102 M
53
GAE300BA60
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