SanRex GAE100AA120 Datasheet
58
GAE100AA120
IGBT MODULE
SanRex IGBT Module GAE100AA120 is designed for high speed, high current
switching applications. This Module is electrically isolated and contains IGBT connected
with clamp diode in series, soft recovery diode (trr=0.1
s) reverse connected across
IGBT.
IC100A V
CES
1200V
V
CES sat
3.0V Typ
tf 0.10 s Typ
Soft recovery diode
Applications
Brake for motor control (VVVF)
Unit mm
Maximum Ratings Unless otherwise Tj 25
Symbol Item
V
CES
Collector-Emitter Voltage
Conditions
with gate terminal shorted to emitter
Ratings
GAE100AA120
Unit
V1200
V
GES
Gate-Emitter Voltage with collector shorted to emitter V
20
Ic
Collector
Current
DC
Pulse ms
A
100
I
CP
200
Ic
Reverse Collector Current A100
P
T
Total Power Dissipation
Tc 25
W780
Tj Junction Temperature 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S. A.C. minute
V2500
Mounting
Torque
Mounting
6
Terminal
5
Recommended Value 2.5 3.9 25 40
N m
kgf cm
4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
Mass Typical Value g225
Electrical Characteristics
Symbol Item
I
GES
Gate Leakage Current
Conditions
V
GE
20V VCE0V
Ratings
Min. Typ. Max.
Unit
nA
500
I
CES
Collector Cut-Off Current
VCE1200V VGE0V
mA1.00
V
BR CES
Collector-Emitter Breakdown Voltage
VGE0V Ic mA
V1200
V
GE th
Gate Threshold Voltage
VCE10V Ic 10mA
V4.5
3.00
7.50
V
CE sat
Collector-Emitter Saturation Voltage
Ic 100A VGE15V
V
11.00
3.40
Cies Input Capacitance
VCE10V VGE0V f 1MHz
nF
0.10
20.00
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Ic 100A V
GE
15V/ 5V
Vcc
600V RG3.0
s
0.20
0.25
td on
0.10
0.35
tf
Emitter-Collector Voltage
0.25
0.35
td off
2.20
0.30
V
ECS
Ic 100A VGE0V
V
0.15
3.50
trr Reverse Recovery Time
Ic 100A V
GE
10V di/ dt 200A/ s
s
0.25
2.20V
FM
Forward Voltage Drop
IF 100A, Clamp Diode
3.50
0.15trr Reverse Recovery Time
IF 100A diF/ dt 200A/ s, Clamp Diode
0.25
Rth j-c
Thermal Impedance Clamp Diode 0.40
Rth j-c
Thermal Resistance
IGBT-Case
/W
V
s
/W
0.16
Diode-Case 0.40
UL;E76102 M
59
GAE100AA120
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