SanRex FSD20A60, FSD20A30 Datasheet
77
FSD20A30/60
THYRISTOR MODULE
SINGLE PHASE BRIDGE TYPE
UL:E76102 M
Unit
A
Symbol Item Conditions Ratings
20
Unit
IT
(AV)
Average On-State Current
I
TSM
Surge On-State Current
Single phase, half wave, 180 conduction, Tc 65
1
2
cycle, 50Hz/60Hz, peak value, non-repetitive
I2t I2t
P
GM
Peak Gate Power Dissipation
P
G AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage (Forward)
V
RGM
Peak Gate Voltage (Reverse)
A
180/200
A
165
A2S
10
1
W
W
3
di dt
Critical Rate of On-State Current
IG100mA Tj 25 V
D
1
2
V
DRMdIG
/
dt 1A/s
V
ISO
Isolation Breakdown Voltage (R.M.S.)
Tj
Operating Junction Temperature
Tstg Storage Temperature
Mounting Torque M5
Mass
A.C.1minute
Recommended Value 1.5 2.5 15 25
10
A
V
5 V
100
A/s
2500 V
30 125
30 125
2.7 28
66
N
f B
g
Symbol Item Conditions Ratings
5
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, single phase, half wave, Tj 125
at V
DRM
, single phase, half wave, Tj 125
V
TM
Peak On-State Voltage, max.
IGTV
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt Turn On Time, max.
dv dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 30A, Tj 25 Inst. measurement
Tj 25 IT1A VD6V
mA
5 mA
1.5 V
40/1.2
Tj 125 V
D
1
2
V
DRM
IT10A IG100mA Tj 25 V
D
1
2
V
DRMdIG
/
dt 1A/s
0.2
mA/V
V
10
Tj 125 , V
D
2
3
V
DRM
, Exponential wave.
Tj 25
Rth j-c
Thermal Impedance, max. Junction to case
50
s
V/s
30 mA
1.0
/
W
Electrical Characteristics
Symbol Item
FSD20A30
Ratings
FSD20A60
Unit
V
RRM
Repetitive Peak Reverse Voltage
300 600 V
300 600 VV
DRM
Repetitive Peak Off-State Voltage
FSD20A is a single phase bridge module consist of thyristors and diodes
ID=20A, V
RRM
=600V
Easy Construction
Highly reliable glass passivated chips
Applications
Rectification (Bridge)
Motor Drive
Maximum Ratings Tj 25 unless otherwise specified
FSD20A30/60
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