4
FCA75CC50
MOSFET MODULE
UL;E76102 M
Unit
A
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions
Ratings
FCA75CC50
Unit
V
DSS
Drain-Source Voltage 500 V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain
Current
DC
Pulse
Duty 35% 75
A
I
DP
150
Is Source Current 75 A
P
T
Total Power Dissipation
Tc 25
430 W
Tj Channel Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S.
A.C. 1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
N m
kgf B
Recommended Value 1.5 2.5 15 25 2.7 28
Mass Typical Value 240 g
Symbol Item Conditions
Ratings
Min. Typ. Max.
1.0
Unit
I
GSS
Gate Leakage Current
V
GS
20V VDS0V
A
1.0I
DSS
Zero Gate Voltage Drain Current
VGS0V VDS500V
mA
500V
BR DSS
Darin-Source Breakdown Voltage
VGS0V ID1mA
V
1.0 5.0V
GS th
Gate-Source Threshold Voltage
VDSVGSID10mA
V
140R
DS on
Drain-Source On-State Resistance
ID40A VGS15V m
3.5V
DS on
Drain-Source On-State Voltage
ID40A VGS15V
V
40gfs Forward Transconductance
VDS10V ID40A
S
13500Ciss Input Capacitance
VGS0V VDS25V f 1.0MHz
pF
2500Coss Output Capacitance
VGS0V VDS25V f 1.0MHz
pF
1000Crss
Reverse Transfer Capacitance
VGS0V VDS25V f 1.0MHz
pF
60
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
VDD300V VGS15V
I
D
40A RG5
ns
60
td on
650
tf 130
td off
2.5V
SDS
Diode Forward Voltage
IS40A VGS0V
V
80 100trr Reverse Recovery Time
IS40A V
GS
5V di/dt 100A/ s
ns
0.29
1.67
Rth j-c
Thermal Resistance
MOSFET
Diode
/W
FCA75CC50 is a dual power MOSFET module designed for fast swiching applications
of high voltage and current.
2 devices are serial connected. The mounting base of the
module is electrically isolated from semiconductor elements for simple heatsink
construction.
ID75A, V
DSS
500V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
trr100ns
Applications
UPS CVCF , Motor Control, Switching Power Supply, etc.