7
FBA50CA45/50
MOSFET MODULE
UL;E76102 M
FBA50CA45/50 is a dual power MOSFET module designed for fast swiching
applications of high voltage and current.
2 devices are serial connected. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
ID50A, V
DSS
500V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
trr700ns
Applications
UPS CVCF , Motor Control, Switching Power Supply, etc.
Unit
A
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions
Ratings
FBA50CA45 FBA50CA50
Unit
V
DSS
Drain-Source Voltage 450 500 V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain
Current
D.C.
Pulse
Duty 25%
50
A
I
DP
100
I
D
Reverse Drain Current 50 A
P
T
Total Power Dissipation
Tc 25
320 W
Tj Channel Temperature 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Voltage R.M.S.
A.C. 1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
N m
kgf B
Recommended Value 1.5 2.5 15 25 2.7 28
Mass Typical Value 220 g
Symbol Item Conditions
Ratings
Min. Typ. Max.
1.0
Unit
I
GSS
Gate Leakage Current
V
GS
20V VDS0V
A
1.0I
DSS
Zero Gate Voltage Drain Current
VGS0V VDS500V
mA
450
V
BR DSS
Drain-Source
Breakdown Voltage
FBA50CA45
FBA50CA50
VGS0V ID1mA
V
500
1.0 5.0V
GS th
Gate-Source Threshold Voltage
VDSVGSID10mA
V
120R
DS on
Drain-Source On-State Resistance
ID25A VGS15V m
3.0V
DS on
Drain-Source On-State Voltage
ID25A VGS15V
V
30gfs Forward Transconductance
VDS10V ID25A
S
10000Ciss Input Capacitance
VGS0V VDS25V f 1.0MHz
pF
1900Coss Output Capacitance
VGS0V VDS25V f 1.0MHz
pF
750Crss
Reverse Transfer Capacitance
VGS0V VDS25V f 1.0MHz
pF
60
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
RL12 RGS50 VGS15V
I
D
25A RG5
ns
60
td on
650
tf 130
td off
1.5V
SDS
Diode Forward Voltage
ID25A VGS0V
V
700trr Reverse Recovery Time
ID25A VGS0V diD/dt 100A/ s
ns
0.39
Rth j-c
Thermal Resistance
/W