SanRex DD60HB160, DD60HB120 Datasheet

73

DD(KD)60HB

120/160

DIODE MODULE

Symbol Item

Ratings

DD60HB120

1200

1350

Unit

VRRM

VRSM

Repetitive Peak Reverse Voltage

Non-Repetitive Peak Reverse Voltage

DD60HB160

1600

1700

V

V

Symbol Item

Average Forward Current

Conditions Ratings Unit

AIF AV

Single phase, half wave, 180 conduction, Tc 111

60

I

F (RMS)

R.M.S. Forward Current

Single phase, half wave, 180 conduction, Tc 111

95 A

I

FSM

Surge Forward Current

1

2

cycle, 50/60HZ, peak value, non-repetitive

1100/1200

A

I

2

t

I2t Value for one cycle of surge current 6000 A2S

Tj Junction Temperature

40 150

Tstg Storage Temperature

40 125

V

ISO

Isolation Breakdown Voltage R.M.S.

Mounting
Torque

A.C.1minute 2500 V

Mounting

M6

Terminal M5

Mass

Recommended Value 2.5 3.9 25 40

Recommended Value 1.5 2.5 15 25

4.7 48)

2.7 28)

N m

f B

g170

Unit a

Electrical Characteristics

Symbol

IRRM

Item

Repetitive Peak Reverse Current, max.

Conditions

at V

DRM

, single phase, half wave. Tj 150

Ratings

20

1.35

0.50

Unit

mA

VFM Forward Voltage Drop, max.

Foward current 180A Tj 25 Inst. measurement

V

Rth j-c

Thermal Impedance, max. Junction to case

/W

Power Diode Module DD60HB series are designed for various rectifier circuits.
DD60HB has two diode chips connected in series and the mounting base is elctrically

isolated from elements for simple heatsink construction. Wide voltage ratage up to,
1,600V is avaiable for various input voltage.

Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability

Applications

Various rectifiers, Battery chargers, DC motor drives

UL;E76102

M

Maximum Ratings

Tj 25

74

DD(KD)60HB120/160