SanRex DD100GB80, DD100GB40 Datasheet

75

DD(KD)100GB40/80

DIODE MODULE

Symbol Item

Ratings

DD100GB40

400

480

Unit

VRRM

VRSM

Repetitive Peak Reverse Voltage

Non-Repetitive Peak Reverse Voltage

DD100GB80

800

960

V

V

Unit a

Symbol Item

Average Forward Current

Conditions Ratings Unit

AIF AV

Single phase, half wave, 180 conduction, Tc 115

100

I

F (RMS)

R.M.S. Forward Current

Single phase, half wave, 180 conduction, Tc 115

155 A

I

FSM

Surge Forward Current

1

2

cycle, 50/60HZ, peak value, non-repetitive

1800/2000

A

I

2

t

I2t Value for one cycle of surge current 16500 A2S

Tj Junction Temperature

40 150

Tstg Storage Temperature

40 125

V

ISO

Isolation Breakdown Voltage R.M.S.

Mounting
Torque

A.C.1minute 2500 V

Mounting

M6

Terminal M5

Mass

Recommended Value 2.5 3.9 25 40

Recommended Value 1.5 2.5 15 25

4.7 48)

2.7 28)

N m

f B

g170

Electrical Characteristics

Symbol

IRRM

Item

Repetitive Peak Reverse Current, max.

Conditions

at V

DRM

, single phase, half wave. Tj 150

Ratings

30

1.25

0.30

Unit

mA

VFM Forward Voltage Drop, max.

Foward current 320A Tj 25 Inst. measurement

V

Rth j-c

Thermal Impedance, max. Junction to case

/W

Power Diode Module DD100GB series are designed for various rectifier circuits.
DD100GB has two diode chips connected in series and the mounting base is elctrically

isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.

Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability

Applications

Various rectifiers, Battery chargers, DC motor drives

UL;E76102

M

Maximum Ratings

Tj 25

76

DD(KD)100GB40/80