Sanken Electric Co TM861S-L, TM841S-L Datasheet

TO-220F 8A Triac

TM841S-L, TM861S-L

■Features

●Repetitive peak off-state voltage: V

●RMS on-state current: I

●Gate trigger current: I

●Isolation voltage: V

GT

ISO

=1500V(50Hz Sine wave, RMS )

=8A

T(RMS)

=30mA max (MODE , , )

●UL approved type available

=400, 600V

DRM

■Absolute Maximum Ratings

Parameter Symbol

Repetitive peak off-state voltage

RMS on-state current

Surge on-state current

Peak gate voltage

Peak gate current

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage

V

DRM

I

T(RMS)

I

TSM

V

GM

I

GM

P

GM

P

G(AV)

Tj

Tstg

V

ISO

TM841S-L

400

Ratings

–40 to

–40 to

1500

8.0

80

10

2

5

0.5

+
+

TM861S-L

600

125

125

External Dimensions

(Unit: mm)

±0.3

16.9

13.0min

φ

3.3

±0.2

8.4

±0.2

±0.2

±0.2

±0.2

4.0

0.8

3.9

2.54

10.0

a
b

2.2

(1) (2) (3)

±0.2

1.35

1.35

0.85

2.54

±0.2

0.15

±

±0.15

+0.2
–0.1

0.45

(1). Terminal 1 (T1)
(2). Terminal 2 (T
(3). Gate (G)

Unit Conditions

V

A

A

Conduction angle 360°, Tc=90°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C

V

A

W

W

°C
°C

Vrms

50Hz Sine wave, RMS, Terminal to Case, 1 min.

0.2

±

4.2
C 0.5

2.8

+0.2
–0.1

0.2

±

2.4

a. Part Number

)

b. Lot Number

2

Weight: Approx. 2.1g

■Electrical Characteristics

Parameter Symbol

Off-state current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Thermal resistance

38

I

DRM

V

V

I

V

Rth

TM

GT

GT

GD

I

H

0.2

Ratings

typmin max

0.3

0.8

0.7

0.8

0.9

8

10

12

30

12

Unit Conditions

2.0 V

0.1

1.6

mA

V

2.0

2.0

2.0

V

30

30

30

mA

V

mA

°C

3.6

/W

(Tj=25°C, unless otherwise specified)

=

V

, R

D

DRM

GK

V

=

V

, R

D

DRM

GK

Pulse test, I

V

=

6V, R

D

V

=

6V, R

D

=

1/2×V

V

D

=

6V

V

D

L

L

=

=

DRM

TM

10Ω, T

10Ω, T

Junction to case

=

, Tj=125

∞

=

, Tj=25

∞

=

10A

=

C

=

C

, Tj=125

25

25

°C

°C

°C

°C

°C

+

+

T

, G

2

+

–

T

, G

2

–

–

T

, G

2

–

+

T

, G

2

+

+

T

, G

2

+

–

T

, G

2

–

–

T

, G

2

–

+

T

, G

2

TM841S-L, TM861S-L

v

– iT Characteristics (max)

T

100

50

(A)

T

10

Tj=125°C

5

1

On-state current i

0.5

0.1

I

T(RMS)–PT(AV )

12

10

(W)

)

AV

(

T

8

6

4

2

Average on-state power P

0

Tj=25°C

0.5

1.0 1.5 2.0 2.5 3.0 3.5

On-state voltage vT (V)

Characteristics

Full-cycle sinewave
Conduction angle: 360°

246810

0

RMS on-state current I

T(RMS

I

T(RMS)

150

125

(°C)

C

100

75

50

Case temperature T

25

0

(A)

)

0

Pulse trigger temperature Characteristics vgt (Typical)

(MODE –

30

10

5

DC gate trigger

voltage at 25°C

( )( )

GT

V

1

w

t

0.5

Gate trigger voltage

at Tj and

vgt

0.1

0.5 1 10 10 10

Pulse width t

) (MODE –

vgt

50%

t

Tj= –40°C

–20°C

25°C
75°C

125°C

w

23104

(µs)

w

Pulse trigger temperature Characteristics

(MODE –

30

10

5

DC gate trigger

current at 25°C

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Tj and

igt

0.1

0.5 1 10 10 10

Pulse width t

V

temperature characteristics

GT

(Typical)

1.2

1.0

(V)

GT

0.8

0.6

0.4

Gate trigger voltage V

0.2

0

MODE (T
MODE (T
MODE (T

–40 0 75 10025 50 125

Junction temperature Tj (°C)

) (MODE –

igt

50%

t

Tj= –40°C

–20°C

25°C
75°C

125°C

(VD=6V, RL=10Ω)

–,G–

)

2

+,G+

)

2

+,G–

)

2

w

23104

(µs)

w

I

Ratings

TSM

100

(A)

80

TSM

60

40

20

Surge on-state current I

0

1 5 10 50 100

– Tc Ratings

Full-cycle sinewave
Conduction angle: 360°

246810

RMS on-state current I

gt (Typical)

i

(A)

)

T(RMS

30

10

5

DC gate trigger

voltage at 25°C

( )( )

GT

V

1

w

t

0.5

Gate trigger voltage

at Tj and

vgt

0.1

0.5 1 10 10 10

30

10

5

DC gate trigger

current at 25°C

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Tj and

igt

0.1

0.5 1 10 10 10

I

temperature characteristics

GT

(Typical)

50

40

(mA)

GT

30

20

10

Gate trigger current I

0

–40 0 75 10025 50 125

Junction temperature Tj (°C)

50Hz

Number of cycle

Tj= –40°C

–20°C

25°C
75°C

125°C

Pulse width t

Tj= –40°C

–20°C

25°C
75°C

125°C

Pulse width t

MODE (T

MODE (T
MODE (T

Gate Characteristics

Initial junction temperature
Tj=125°C

10 ms

1cycle

I

T(RMS)

(°C)

a

Ambient temperature T

23104

23104

w

–

, G–)

2

+

, G–)

2

+

, G+)

2

I

TSM

– Ta Ratings

150

125

100

75

50

25

0

0

RMS on-state current I

) (MODE –

vgt

50%

t

w

(µs)

w

) (MODE –

igt

50%

t

w

(µs)

(VD=6V, RL=10Ω)

Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind

1.0 1.50.5 2.0 2.5 3.0

T(RMS

(A)

)

12

10

(V)

8

GF

6

4

Gate voltage v

2

0

0123

I

temperature Characteristics

H

(Typical)

10

8

(mA)

H

6

4

Holding current I

2

0

–40 0 75 10025 50 125

30

10

5

DC gate trigger

voltage at 25°C

( )( )

GT

V

1

w

t

0.5

Gate trigger voltage

at Tj and

vgt

0.1

0.5 1 10 10 10

30

10

5

DC gate trigger

current at 25°C

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Tj and

igt

0.1

0.5 1 10 10 10

Transient thermal resistance
Characteristics

100

(°C/W)

th

10

1

Transient thermal resistance r

0.1

0.1 1 10 10 10

(V)

3

GT

2

1

0

0

Gate trigger voltage V

P

GM

=5W

See graph at the upper right

Gate current i

+

–

(T

–T

)

2

1

–

+

(T

–T

)

2

1

Junction temperature Tj (°C)

)

vgt

Tj= –40°C

–20°C

25°C
75°C

125°C

23104

Pulse width t

Pulse width t

Tj= –40°C

–20°C

25°C
75°C

125°C

Junction to
operating
environment

t, Time (ms)

(µs)

w

)

igt

23104

(µs)

w

23104105

Tj= –20°C

Tj=25°C

20 40 80 10060

Gate trigger current

I

(mA)

GT

(A)

GF

(V

=30V)

D

50%

t

w

50%

t

w

Junction to
case

Tj= –40°C

39