Sanken Electric Co TM861M-L, TM841M-L Datasheet
TO-220 8A Triac
TM841M-L, TM861M-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger Current: I
GT
=8A
T(RMS)
=30mA max (MODE , , )
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
TM841M-L
400
Ratings
–40 to
–40 to
TM861M-L
8.0
80
10
2
5
0.5
+
125
+
125
600
External Dimensions
(Unit: mm)
0.2
±
3.0
0.2
16.7max
±
8.8
12.0 min
4.0 max
2.5
a
0.1
±
10.4max
b
(1) (2) (3)
φ
3.75
0.15
±
1.35
0.1
±
2.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
±
0.1
Unit Conditions
V
A
A
Conduction angle 360°, Tc=108°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
5.0max
2.1max
+0.2
–0.1
0.65
0.2
±
1.7
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
36
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.8
0.7
0.8
0.9
8
10
12
30
12
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
30
30
30
mA
V
mA
°C
1.8
/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Pulse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
=
6V
V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
, Tj=125
∞
=
, Tj=25
∞
=
10A
=
C
=
C
, Tj=125
25
25
°C
°C
°C
°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
TM841M-L, TM861M-L
v
– iT Characteristics (max)
T
100
50
(A)
T
10
5
On-state current i
1
0.5
0.3
1.0 2.0 3.63.0
I
T(RMS)–PT(AV )
12
Full-cycle sinewave
Conduction angle: 360°
10
(W)
)
AV
(
T
8
6
4
2
Average on-state power P
0
0
Tj=25°C
Tj=125°C
On-state voltage vT (V)
Characteristics
246810
RMS on-state current I
T(RMS
(A)
)
Pulse trigger temperature Characteristics vgt
(MODE –
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
0.1
0.5 1 10 10 10
Pulse width t
) (MODE –
vgt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
w
23104
(µs)
w
Pulse trigger temperature Characteristics
(MODE –
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10 10
Pulse width t
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
MODE (T
MODE (T
MODE (T
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
) (MODE –
igt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
(VD=6V, RL=10Ω)
–,G–
)
2
+,G+
)
2
+,G–
)
2
w
23104
(µs)
w
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
Full-cycle sinewave
Conduction angle: 360°
0
0
RMS on-state current I
gt
i
I
Ratings
TSM
100
(A)
80
TSM
60
40
20
Surge on-state current I
0
1 5 10 50 100
24 1068
T(RMS
(A)
)
(Typical)
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
0.1
0.5 1 10 10 10
(Typical)
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10 10
I
temperature characteristics
GT
(Typical)
24
20
(mA)
GT
10
Gate trigger current I
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
Number of cycle
Tj= –40°C
–20°C
25°C
75°C
125°C
Pulse width t
Tj= –40°C
–20°C
25°C
75°C
125°C
Pulse width t
MODE (T
MODE (T
MODE (T
Gate Characteristics
Initial junction temperature
Tj=125°C
10 ms
1cycle
50Hz
I
T(RMS)
(°C)
a
Ambient temperature T
23104
23104
I
TSM
– Ta Ratings
150
125
100
75
50
25
0
0
RMS on-state current I
) (MODE –
vgt
50%
t
w
(µs)
w
) (MODE –
igt
50%
t
w
(µs)
w
(VD=6V, RL=10Ω)
–
, G–)
2
+
, G–)
2
+
, G+)
2
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
1.0 1.50.5 2.0 2.5 3.0
T(RMS
(A)
)
12
10
(V)
8
GF
6
4
Gate voltage v
2
0
012 3
I
temperature Characteristics
H
(Typical)
20
(mA)
H
10
Holding current I
0
–40 0 75 10025 50 125
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
0.1
0.5 1 10 10 10
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10 10
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
Transient thermal resistance r
0.1
0.1 1 10 10 10
P
G
M
=
5W
See graph at the upper right
Gate current i
(T
2
–
(T
–T
2
Junction temperature Tj (°C)
)
vgt
Tj= –40°C
–20°C
25°C
75°C
125°C
23104
Pulse width t
Pulse width t
w
Tj= –40°C
–20°C
25°C
75°C
125°C
23104
w
Junction to
operating
environment
t, Time (ms)
(µs)
)
igt
(µs)
Junction to
case
23104105
(V)
3
GT
2
1
Tj=25°C
0
0
20 8040 60
Gate trigger current
(mA)
I
GT
Gate trigger voltage V
(A)
GF
(V
D
+
–
–T
)
1
+
)
1
50%
t
w
50%
t
w
Tj= –20°C
=30V)
Tj= –40°C
37
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