TO-220 5A Triac
TM541M-L, TM561M-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger Current: I
GT
=5A
T(RMS)
=20mA max (MODE , , )
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
TM541M-L
400
Ratings
–40 to
–40 to
TM561M-L
5.0
50
10
2
5
0.5
+
125
+
125
600
External Dimensions
(Unit: mm)
Unit Conditions
V
A
A
V
A
W
W
°C
°C
10.4max
0.2
±
3.0
0.2
16.7max
±
8.8
12.0 min
4.0 max
2.5
a
±
0.1
b
(1) (2) (3)
φ
3.75
±
0.15
1.35
±
0.1
2.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
±
0.1
Conduction angle 360°, Tc=111°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
5.0max
2.1max
+0.2
–0.1
0.65
±
0.2
1.7
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
32
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.7
0.7
0.8
0.8
7
8
10
15
5
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
20
20
20
mA
V
mA
2.7
°C/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Pulse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
V
=
6V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
=
=
, Tj
∞
7A
, Tj=125
∞
, Tj
=
C
=
C
=
125°C
=
25°C
25°C
25°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
TM541M-L, TM561M-L
v
– iT Characteristics (max)
T
100
50
(A)
T
10
5
Tj=25°C
Tj=125°C
On-state current i
1
0.5
1.0 2.0 4.03.0
On-state voltage vT (V)
I
T(RMS)–PT(AV )
7
Full-cycle sinewave
Conduction angle: 360°
6
(W)
)
AV
(
T
5
4
3
2
1
Average on-state power P
0
0
Characteristics
1234 65
RMS on-state current I
T(RMS
I
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
Full-cycle sinewave
Conduction angle: 360°
0
(A)
)
0
Pulse trigger temperature Characteristics vgt (Typical)
(MODE –
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
) (MODE –
–20°C
0°C
25°C
50°C
75°C
vgt
100°C
125°C
t
w
Tj= –40°C
I
TSM
100
(A)
TSM
Surge on-state current I
– Tc Ratings
1234 65
RMS on-state current I
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
Ratings
Initial junction temperature
Tj=125°C
80
60
40
20
0
1 5 10 50 100
(A)
)
T(RMS
10 ms
1cycle
50Hz
Number of cycle
I
T(RMS)
150
125
(°C)
a
100
Ambient temperature T
Tj= –40°C
–20°C
0°C
– Ta Ratings
75
50
25
0
0
RMS on-state current I
) (MODE –
vgt
25°C
50°C
75°C
100°C
125°C
I
TSM
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
1.0 1.50.5 2.0 2.5 3.0
t
w
T(RMS
(A)
)
Gate Characteristics
12
10
(V)
8
GF
6
4
Gate voltage v
2
0
012 3
I
temperature Characteristics
H
(Typical)
20
(mA)
H
10
Holding current I
0
–40 0 7550 10025 125
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
P
G
f
duty 10%
50Hz
See graph at the upper right
Gate current i
+
–
(T
–T
2
1
–
+
(T
–T
)
2
1
Junction temperature Tj (°C)
Tj= –40°C
–20°C
M
=
5W
)
0°C
25°C
)
50°C
75°C
100°C
(V)
3
GT
2
1
Tj=25°C
0
0
20 40
Gate trigger current
(mA)
I
GT
Gate trigger voltage V
(A)
GF
(V
=30V, RGK=
D
vgt
t
w
125°C
Tj= –40°C
Tj= –20°C
)
∞
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
Pulse width t
23
(µs)
w
Pulse trigger temperature Characteristics
(MODE –
30
10
DC gate trigger
current at 25°C
5
( )( )
GT
I
1
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
0.5 1 10 10 10
Pulse width t
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
MODE (T
MODE (T
MODE (T
0
– 40 0 75 10025 50 125
Junction temperature Tj (°C)
) (MODE –
Tj= –40°C
(VD=6V, RL=10Ω)
–,G–
)
2
+,G+
)
2
+,G–
)
2
igt
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
23
(µs)
w
t
w
gt (Typical)
i
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
Pulse width t
30
10
DC gate trigger
current at 25°C
5
( )( )
GT
I
1
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
0.5 1 10 10 10
Pulse width t
I
temperature characteristics
GT
(Typical)
100
(mA)
GT
50
10
MODE (T
MODE (T
MODE (T
5
(µs)
w
) (MODE –
Tj= –40°C
–20°C
0°C
25°C
50°C
(µs)
w
(VD=6V, RL=10Ω)
–
, G–)
2
+
, G–)
2
+
, G+)
2
Gate trigger current I
1
–40 0 50 75 10025 125
Junction temperature Tj (°C)
23
igt
t
w
75°C
100°C
125°C
23
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
Pulse width t
30
10
DC gate trigger
current at 25°C
5
( )( )
GT
I
1
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
0.5 1 10 10 10
Pulse width t
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
Transient thermal resistance r
0.1
0.1 1 10 10 10
(µs)
w
Tj= –40°C
–20°C
0°C
25°C
(µs)
w
(Junction to case)
t, Time (ms)
)
50°C
23
igt
t
w
75°C
100°C
125°C
23
23104105
33